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MMBT5551LT1 |
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| Part Number | MMBT5551LT1 |
| Manufacturer | Motorola |
| Description | MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMBT5550LT1/D High Voltage Transistors NPN Silicon 1 BASE COLLECTOR 3 MMBT5550LT1 MMBT5551LT1* *Motorola Preferred Device MAXIMUM RAT... |
| Features |
Unit
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(3) (IC = 1.0 mAdc, IB = 0) Collector – Base Breakdown Voltage (IC = 100 mAdc, IE = 0) Emitter – Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 100 Vdc, IE = 0) (VCB = 120 Vdc, IE = 0) (VCB = 100 Vdc, IE = 0, TA = 100°C) (VCB = 120 Vdc, IE = 0, TA = 100°C) Emitter Cutoff Current (VEB = 4.0 Vdc, IC = 0) 1. FR – 5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. 3. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2.0%. Thermal Clad is a trademark of the Bergquist Company Preferred device... |
| Document |
 MMBT5551LT1 Data Sheet
PDF 199.80KB |
Similar Datasheet
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| 1 | MMBT5551LT1 |
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| 2 | MMBT5551LT1 |
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| 4 | MMBT5551L |
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