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| Part Number | MMBT5551 |
| Distributor | Stock | Price | Buy |
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| Part Number | MMBT5551 |
| Manufacturer | Diodes Incorporated |
| Title | NPN Transistor |
| Description | Features • Epitaxial Planar Die Construction • Complementary PNP Type Available (MMBT5401) • Ideal for Low Power Amplification and Switching • Lead, Halogen and Antimony Free, RoHS Compliant • "Green" Device (Notes 2 and 3) MMBT5551 NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Mechanical Data • Case: . |
| Features |
• Epitaxial Planar Die Construction • Complementary PNP Type Available (MMBT5401) • Ideal for Low Power Amplification and Switching • Lead, Halogen and Antimony Free, RoHS Compliant • "Green" Device (Notes 2 and 3) MMBT5551 NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Mechanical Data • Case: SOT-23 • Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 • Moisture Sensitivity: L. |
| Part Number | MMBT5551 |
| Manufacturer | UTC |
| Title | HIGH CURRENT SILICON BRIDGE RECTIFIERS |
| Description | UNISONIC TECHNOLOGIES CO., LTD MMBT5551 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES * High Collector-Emitter Voltage: VCEO=160V * High current gain 3 1 2 SOT-23 *Pb-free plating product number:MMBT5551L www.DataSheet4U.com ORDERING INFORMATION Order Number Norma. |
| Features | * High Collector-Emitter Voltage: VCEO=160V * High current gain 3 1 2 SOT-23 *Pb-free plating product number:MMBT5551L www.DataSheet4U.com ORDERING INFORMATION Order Number Normal Lead Free Plating MMBT5551-x-AE3-6-R MMBT5551L-x-AE3-6-R Package SOT-23 Pin Assignment 1 2 3 E B C Packing Tape Reel MMBT5551L-x-AE3-6-R (1)Packing Type (2)Pin Assignment (3)Package Type (4)Rank (5)Lead Plating (1). |
| Part Number | MMBT5551 |
| Manufacturer | Fairchild |
| Title | NPN General Purpose Amplifier |
| Description | This device is designed for general-purpose high-voltage amplifiers and gas discharge display drivers. 2N5551 TO-92 Ordering Information Part Number 2N5551TA 2N5551TFR 2N5551TF 2N5551BU MMBT5551 Top Mark 5551 5551 5551 5551 3S MMBT5551 3 2 1 SOT-23 Marking: 3S 1. Base 2. Emitter 3. Collector P. |
| Features | operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted. Symbol Parameter Value Units VCEO VCBO VEBO IC TJ, Tstg(2) Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector current - Continuous Junction and Storage Temperature 160 180 6 600 -55 to +150 V V V mA °C Notes:. |
| Part Number | MMBT5551 |
| Manufacturer | NTE |
| Title | Silicon NPN Transistor |
| Description | The MMBT5551 is a silicon NPN transistor in an SOT−23 type surface mount case designed for use in high voltage applications. Absolute Maximum Ratings: Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 160V Co. |
| Features | . . . . . . . . . . . . . . . . . . . . . . . . 225mW 1.8mW/C Thermal Resistance, Junction−to−Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 556C/mW Total PDowerearteDiAsbsiopvaetio2n5(CTA. = +25C, ........ Alumina ........ Substrate, Note 2), ................. .P.D. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. |
| Part Number | MMBT5551 |
| Manufacturer | TAITRON |
| Title | SMD High Voltage Transistor |
| Description | MMBT5550 MMBT5551 VCEO VCBO VEBO IC Marking Code Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current-Continuous M1F G1 140 160 160 180 6.0 600 Thermal Characteristics Symbol Ptot RθJA Ptot RθJA TJ, TSTG Description Total Device Dissipation FR-5 Board,. |
| Features |
• NPN Silicon Epitaxial Planar Transistor for Switching and Amplifier Applications • RoHS compliance Mechanical Data SOT-23 Case: Terminals: Weight: SOT-23, Plastic Package Solderable per MIL-STD-202G, Method 208 0.008 gram Maximum Ratings (T Ambient=25ºC unless noted otherwise) Symbol Description MMBT5550 MMBT5551 VCEO VCBO VEBO IC Marking Code Collector-Emitter Voltage Collector-Base . |
| Part Number | MMBT5551 |
| Manufacturer | Diotec |
| Title | NPN Transistor |
| Description | MMBT5550 / MMBT5551 MMBT5550 / MMBT5551 NPN Surface Mount General Purpose Si-Epi-Planar Transistors Si-Epi-Planar Universaltransistoren für die Oberflächenmontage Version 2006-05-09 2.9 ±0.1 0.4 3 Type Code 1 2 1.1 1.9 Dimensions - Maße [mm] 1=B 2=E 3=C 2.5 max 1.3±0.1 Power dissipation –. |
| Features |
schichttemperatur Storage temperature – Lagerungstemperatur Tj -55...+150°C TS -55…+150°C Characteristics (Tj = 25°C) DC current gain – Kollektor-Basis-Stromverhältnis 2) IC = 1 mA, VCE = 5 V MMBT5550 MMBT5551 hFE hFE IC = 10 mA, VCE = 5 V MMBT5550 MMBT5551 hFE hFE IC = 50 mA, VCE = 5 V MMBT5550 MMBT5551 hFE hFE Collector-Emitter saturation voltage – Kollektor-Emitter-Sättigungsspg. 2. |
| Part Number | MMBT5551 |
| Manufacturer | WEITRON |
| Title | High Voltage NPN Transistors |
| Description | High Voltage NPN Transistors MMBT5550 MMBT5551 COLLECTOR 3 1 BASE 2 EMITTER 3 1 2 SOT-23 V CEO Value 140 160 6.0 600 556 300 2.4 417 MMBT5550 = M1F ; MMBT5551 = G1 (TA=25 C unless otherwise noted) 1.0 , -100 , 10 , (3) MMBT5550 MMBT5551 MMBT5550 MMBT5551 WEITRON http://www.weitron.com.tw . |
| Features | es MMBT5550 MMBT5551 Base-Emitter Saturation Voltage (IC=10 mAdc, IB=1.0mAdc) (IC=50 mAdc, IB=5.0mAdc) Both Types MMBT5550 MMBT5551 1. FR-5=1.0 x 0.75 x 0.062 in 2. Alumina=0.4 x 0.3 x 0.024 in. 99.5% alumina 3. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2.0% hFE VCE(sat) VBE(sat) 60 80 60 80 20 30 - - - - 250 250 - Vdc 0.15 0.25 0.20 Vdc 1.0 1.2 1.0 WEITRON http://www.weitron.com.tw h. |
| Part Number | MMBT5551 |
| Manufacturer | SEMTECH |
| Title | NPN Transistor |
| Description | MMBT5551 NPN Silicon Epitaxial Planar Transistors for high voltage amplifier applications. Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Range Charact. |
| Features | nit 160 V 180 V 6V 600 mA 200 mW 150 OC -55 to +150 OC Symbol hFE hFE hFE V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO VCE sat VCE sat VBE sat VBE sat fT CCBO NF RthA Min. 80 80 30 160 180 6 - - - 100 - - Max. 250 - - - 50 50 0.15 0.2 1 1 300 6 8 200 Unit V V V nA nA V V V V MHz pF dB K/W SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the. |
| Part Number | MMBT5551 |
| Manufacturer | ON Semiconductor |
| Title | NPN Amplifier |
| Description | This device is designed for general-purpose high-voltage amplifiers and gas discharge display drivers. 2N5551 MMBT5551 3 TO-92 2 1 SOT-23 Marking: 3S 1. Base 2. Emitter 3. Collector Ordering Information(1) Part Number 2N5551TA 2N5551TFR 2N5551TF 2N5551BU MMBT5551 Top Mark 5551 5551 5551 5551 . |
| Features | on or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted. Symbol Parameter Value Units VCEO Collector-Emitter Vol. |
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| 2 | MMBT5550 |
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| 3 | MMBT5550 |
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| 4 | MMBT5550 |
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| 7 | MMBT5550 |
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