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MMBT5551 |
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| Part Number | MMBT5551 |
| Manufacturer | WEITRON |
| Description | High Voltage NPN Transistors MMBT5550 MMBT5551 COLLECTOR 3 1 BASE 2 EMITTER 3 1 2 SOT-23 V CEO Value 140 160 6.0 600 556 300 2.4 417 MMBT5550 = M1F ; MMBT5551 = G1 (TA=25 C unless otherwise not... |
| Features |
es
MMBT5550 MMBT5551
Base-Emitter Saturation Voltage (IC=10 mAdc, IB=1.0mAdc) (IC=50 mAdc, IB=5.0mAdc)
Both Types
MMBT5550 MMBT5551
1. FR-5=1.0 x 0.75 x 0.062 in 2. Alumina=0.4 x 0.3 x 0.024 in. 99.5% alumina 3. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2.0%
hFE VCE(sat) VBE(sat)
60 80 60 80 20 30
-
-
-
-
250 250 -
Vdc
0.15
0.25 0.20
Vdc
1.0
1.2 1.0
WEITRON
http://www.weitron.com.tw
hFE, DC CURRENT GAIN
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
MMBT5550 MMBT5551
500 300 200
100
50 30 20
10 7.0 5.0
0.1
TJ = 125 C 25 C -55 C
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
IC, COLLECTOR... |
| Document |
 MMBT5551 Data Sheet
PDF 312.75KB |
Similar Datasheet
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Desde 2024. D4U Semiconductor.
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