MMBT3904LT1 Datasheet. existencias, precio

logo
Busque con el número de pieza junto con el fabricante o la descripción

MMBT3904LT1 General Purpose Transistor


MMBT3904LT1
Part Number MMBT3904LT1
Distributor Stock Price Buy
Silicon Standard
MMBT3904LT1
Part Number MMBT3904LT1
Manufacturer Silicon Standard
Title NPN Transistor
Description FEATURES „ Power dissipation, PCM:0.2W (Tamb=25℃) „ Collector current, ICM: 0.2A „ Collector-base voltage, V(BR)CBO: 60V „ Operating and storage junction temperature range: TJ, Tstg: -55℃ to +150℃ „ SOT-23 plastic-encapsulate package Device Marking: AM1 MMBT3904LT1 Transistors (NPN) ELECTRICAL CHA.
Features „ Power dissipation, PCM:0.2W (Tamb=25℃) „ Collector current, ICM: 0.2A „ Collector-base voltage, V(BR)CBO: 60V „ Operating and storage junction temperature range: TJ, Tstg: -55℃ to +150℃ „ SOT-23 plastic-encapsulate package Device Marking: AM1 MMBT3904LT1 Transistors (NPN) ELECTRICAL CHARACTERISTICS Parameter Symbol Test Conditions Collector-base breakdown voltage V(BR)CBO Ic= 100 µA, IE=0 .
Motorola
MMBT3904LT1
Part Number MMBT3904LT1
Manufacturer Motorola
Title General Purpose Transistor
Description MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMBT3904LT1/D General Purpose Transistor NPN Silicon COLLECTOR 3 1 BASE MMBT3904LT1 Motorola Preferred Device 3 2 EMITTER 1 2 MAXIMUM RATINGS Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collec.
Features or
  – Emitter Breakdown Voltage (3) (IC = 1.0 mAdc, IB = 0) Collector
  – Base Breakdown Voltage (IC = 10 mAdc, IE = 0) Emitter
  – Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Base Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc) Collector Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc) 1. FR
  – 5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. 3. Pulse Test: Pulse Width 300 ms, Duty Cycle .
Tuofeng Semiconductor
MMBT3904LT1
Part Number MMBT3904LT1
Manufacturer Tuofeng Semiconductor
Title NPN Transistor
Description Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate Transistors MMBT3904LT1 TRANSISTOR (NPN) FEATURES SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Power dissipation PCM: 0.2 W (Tamb=25℃) Collector current ICM: 0.2 Collector-base voltage A V(BR)CBO: 60 V Operating and st.
Features SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Power dissipation PCM: 0.2 W (Tamb=25℃) Collector current ICM: 0.2 Collector-base voltage A V(BR)CBO: 60 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ 2. 9 1. 9 0. 95 0. 95 1. 0 2. 4 1. 3 Unit: mm 0. 4 ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Col.

similar datasheet

No. Parte # Fabricante Descripción Hoja de Datos
1 MMBT3904LT1G
ON Semiconductor
NPN Transistor Datasheet
2 MMBT3904LT3G
ON Semiconductor
NPN Transistor Datasheet
3 MMBT3904L
ON
NPN Transistor Datasheet
4 MMBT3904LP
Diodes
40V NPN SMALL SIGNAL TRANSISTOR Datasheet
5 MMBT3904
Diodes
40V NPN SMALL SIGNAL TRANSISTOR Datasheet
6 MMBT3904
Infineon Technologies AG
NPN Silicon Switching Transistors Datasheet
7 MMBT3904
NXP
NPN switching transistor Datasheet
8 MMBT3904
STMicroelectronics
SMALL SIGNAL NPN TRANSISTOR Datasheet
9 MMBT3904
Micro Commercial Components
NPN Transistor Datasheet
10 MMBT3904
Fairchild
NPN General Purpose Amplifier Datasheet
More datasheet from ON
logo    Desde 2024. D4U Semiconductor.   |   Contáctenos   |   Política de Privacidad