Part Number | MMBT3904LT1 |
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Part Number | MMBT3904LT1 |
Manufacturer | Silicon Standard |
Title | NPN Transistor |
Description | FEATURES Power dissipation, PCM:0.2W (Tamb=25℃) Collector current, ICM: 0.2A Collector-base voltage, V(BR)CBO: 60V Operating and storage junction temperature range: TJ, Tstg: -55℃ to +150℃ SOT-23 plastic-encapsulate package Device Marking: AM1 MMBT3904LT1 Transistors (NPN) ELECTRICAL CHA. |
Features | Power dissipation, PCM:0.2W (Tamb=25℃) Collector current, ICM: 0.2A Collector-base voltage, V(BR)CBO: 60V Operating and storage junction temperature range: TJ, Tstg: -55℃ to +150℃ SOT-23 plastic-encapsulate package Device Marking: AM1 MMBT3904LT1 Transistors (NPN) ELECTRICAL CHARACTERISTICS Parameter Symbol Test Conditions Collector-base breakdown voltage V(BR)CBO Ic= 100 µA, IE=0 . |
Part Number | MMBT3904LT1 |
Manufacturer | Motorola |
Title | General Purpose Transistor |
Description | MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMBT3904LT1/D General Purpose Transistor NPN Silicon COLLECTOR 3 1 BASE MMBT3904LT1 Motorola Preferred Device 3 2 EMITTER 1 2 MAXIMUM RATINGS Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collec. |
Features |
or – Emitter Breakdown Voltage (3) (IC = 1.0 mAdc, IB = 0) Collector – Base Breakdown Voltage (IC = 10 mAdc, IE = 0) Emitter – Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Base Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc) Collector Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc) 1. FR – 5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. 3. Pulse Test: Pulse Width 300 ms, Duty Cycle . |
Part Number | MMBT3904LT1 |
Manufacturer | Tuofeng Semiconductor |
Title | NPN Transistor |
Description | Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate Transistors MMBT3904LT1 TRANSISTOR (NPN) FEATURES SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Power dissipation PCM: 0.2 W (Tamb=25℃) Collector current ICM: 0.2 Collector-base voltage A V(BR)CBO: 60 V Operating and st. |
Features | SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Power dissipation PCM: 0.2 W (Tamb=25℃) Collector current ICM: 0.2 Collector-base voltage A V(BR)CBO: 60 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ 2. 9 1. 9 0. 95 0. 95 1. 0 2. 4 1. 3 Unit: mm 0. 4 ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Col. |
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