MMBT3904LT1 |
Part Number | MMBT3904LT1 |
Manufacturer | Silicon Standard |
Description | FEATURES Power dissipation, PCM:0.2W (Tamb=25℃) Collector current, ICM: 0.2A Collector-base voltage, V(BR)CBO: 60V Operating and storage junction temperature range: TJ, Tstg: -55℃ to +150℃ S... |
Features |
Power dissipation, PCM:0.2W (Tamb=25℃) Collector current, ICM: 0.2A Collector-base voltage, V(BR)CBO: 60V Operating and storage junction temperature range:
TJ, Tstg: -55℃ to +150℃ SOT-23 plastic-encapsulate package Device Marking: AM1
MMBT3904LT1
Transistors (NPN)
ELECTRICAL CHARACTERISTICS
Parameter
Symbol
Test Conditions
Collector-base breakdown voltage V(BR)CBO Ic= 100 µA, IE=0
Collector-emitter breakdown voltage V(BR)CEO VIc= 1 mA, IB=0
Min 60
Max 40
Unit V V
Emitter-base breakdown voltage
V(BR)EBO IE= 100µA, IC=0
6
V
Collector cut-off current
ICBO
VCB= 60V, IE=0... |
Document |
MMBT3904LT1 Data Sheet
PDF 70.59KB |
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