MMBT3904LT1 |
Part Number | MMBT3904LT1 |
Manufacturer | Motorola |
Description | MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMBT3904LT1/D General Purpose Transistor NPN Silicon COLLECTOR 3 1 BASE MMBT3904LT1 Motorola Preferred Device 3 2 EMITTER 1 2 MAXIM... |
Features |
or – Emitter Breakdown Voltage (3) (IC = 1.0 mAdc, IB = 0) Collector – Base Breakdown Voltage (IC = 10 mAdc, IE = 0) Emitter – Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Base Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc) Collector Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc) 1. FR – 5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. 3. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%. V(BR)CEO V(BR)CBO V(BR)EBO IBL ICEX 40 60 6.0 — — — — — 50 50 Vdc Vdc Vdc nAdc nAdc v v Thermal Clad is a registered trademark of the Berquist Company. Preferred devices are Motorol... |
Document |
MMBT3904LT1 Data Sheet
PDF 230.80KB |
Similar Datasheet
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | MMBT3904LT1 |
ON |
General Purpose Transistor | |
2 | MMBT3904LT1 |
Tuofeng Semiconductor |
NPN Transistor | |
3 | MMBT3904LT1 |
Silicon Standard |
NPN Transistor | |
4 | MMBT3904LT1G |
ON Semiconductor |
NPN Transistor | |
5 | MMBT3904LT3G |
ON Semiconductor |
NPN Transistor | |
6 | MMBT3904L |
ON |
NPN Transistor |