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| Part Number | MJE702 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | MJE702 |
| Manufacturer | INCHANGE |
| Title | PNP Transistor |
| Description | ·DC Current Gain— : hFE = 2000(TYP) @ IC= -2A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general-purpose amplifier and low-speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collec. |
| Features | SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA; IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -1.5A; IB= -30mA VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -4A; IB= -40mA VBE(on)-1 Base-Emitter On Voltage IC= -1.5A; VCE= -3V VBE(on)-2 Base-Emitter On Voltage IC= -4A; VCE= -3V ICEO Collector Cutoff Current ICBO Collector Cutoff Cu. |
| Part Number | MJE702 |
| Manufacturer | Fairchild |
| Title | PNP Epitaxial Silicon Darlington Transistor |
| Description | MJE700/701/702/703 MJE700/701/702/703 Monolithic Construction With Built-in BaseEmitter Resistors • High DC Current Gain : hFE= 750 (Min.) @ IC= -1.5 and -2.0A DC • Complement to MJE800/801/802/803 1 TO-126 2.Collector 3.Base 1. Emitter PNP Epitaxial Silicon Darlington Transistor Absolute Maxim. |
| Features | n IC = - 10mA, IB = 0 Min. -60 -80 -100 -100 -100 -500 -2 750 750 100 -2.5 -2.8 -3 -1.2 -2.5 -3 V V V V V V Max. Units V V µA µA µA µA mA ICEO VCE = - 60V, IB = 0 VCE = - 80V, IB = 0 VCB = Rated BVCEO, IE = 0 VCB = Rated BVCEO, IE = 0 TC = 100°C VBE = - 5V, IC = 0 VCE = - 3V, IC = - 1.5A VCE = - 3V, IC = - 2A VCE = - 3V, IC = - 4A IC = - 1.5A, IB = - 30mA IC = - 2A, IB = - 40mA IC = - 4A, IB = -. |
| Part Number | MJE702 |
| Manufacturer | Central Semiconductor |
| Title | COMPLEMENTARY POWER DARLINGTON TRANSISTORS |
| Description | The CENTRAL SEMICONDUCTOR MJE700, MJE800 series devices are medium power complementary silicon Darlington transistors designed for audio amplifier applications as complementary output devices. MARKING: FULL PART NUMBER TO-126 CASE MAXIMUM RATINGS: (TC=25°C) Collector-Base Voltage Collector-Emitt. |
| Features | JE700,701,800,801) 60 VCE(SAT) IC=1.5A, IB=30mA (MJE700,702,800,802) VCE(SAT) IC=2.0A, IB=40mA (MJE701,703,801,803) VCE(SAT) IC=4.0A, IB=40mA VBE(ON) VCE=3.0V, IC=1.5A (MJE700,702,800,802) VBE(ON) VCE=3.0V, IC=2.0A (MJE701,703,801,803) VBE(ON) VCE=3.0V, IC=4.0A hFE VCE=3.0V, IC=1.5A (MJE700,702,800,802) 750 hFE VCE=3.0V, IC=2.0A (MJE701,703,801,803) 750 hFE VCE=3.0V, IC=4.0A 100 fT . |
| Part Number | MJE702 |
| Manufacturer | ON |
| Title | DARLINGTON POWER TRANSISTORS |
| Description | www.DataSheet4U.com MJE700, MJE702, MJE703 (PNP) − MJE800, MJE802, MJE803 (NPN) Plastic Darlington Complementary Silicon Power Transistors These devices are designed for general−purpose amplifier and low−speed switching applications. Features http://onsemi.com • High DC Current Gain − hFE = 2000 . |
| Features |
http://onsemi.com
• High DC Current Gain − hFE = 2000 (Typ) @ IC • • • = 2.0 Adc Monolithic Construction with Built−in Base−Emitter Resistors to Limit Leakage − Multiplication Choice of Packages − MJE700 and MJE800 Series Pb−Free Packages are Available* 4.0 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 40 WATT 50 WATT ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ . |
similar datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | MJE700 |
INCHANGE |
PNP Transistor |
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| 2 | MJE700 |
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| 3 | MJE700 |
ON |
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| 4 | MJE700 |
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PNP Epitaxial Silicon Darlington Transistor |
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| 5 | MJE700 |
Central Semiconductor |
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| 6 | MJE700G |
ON Semiconductor |
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| 7 | MJE700T |
Motorola |
4.0 AMPERE DARLINGTON POWER TRANSISTORS |
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| 8 | MJE700T |
Central Semiconductor |
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| 9 | MJE700T |
INCHANGE |
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| 10 | MJE701 |
Fairchild |
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