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| Part Number | MJE701 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | MJE701 |
| Manufacturer | Central Semiconductor |
| Title | COMPLEMENTARY POWER DARLINGTON TRANSISTORS |
| Description | The CENTRAL SEMICONDUCTOR MJE700, MJE800 series devices are medium power complementary silicon Darlington transistors designed for audio amplifier applications as complementary output devices. MARKING: FULL PART NUMBER TO-126 CASE MAXIMUM RATINGS: (TC=25°C) Collector-Base Voltage Collector-Emitt. |
| Features | JE700,701,800,801) 60 VCE(SAT) IC=1.5A, IB=30mA (MJE700,702,800,802) VCE(SAT) IC=2.0A, IB=40mA (MJE701,703,801,803) VCE(SAT) IC=4.0A, IB=40mA VBE(ON) VCE=3.0V, IC=1.5A (MJE700,702,800,802) VBE(ON) VCE=3.0V, IC=2.0A (MJE701,703,801,803) VBE(ON) VCE=3.0V, IC=4.0A hFE VCE=3.0V, IC=1.5A (MJE700,702,800,802) 750 hFE VCE=3.0V, IC=2.0A (MJE701,703,801,803) 750 hFE VCE=3.0V, IC=4.0A 100 fT . |
| Part Number | MJE701 |
| Manufacturer | INCHANGE |
| Title | PNP Transistor |
| Description | ·Collector–Emitter Breakdown Voltage— : V(BR)CEO = -60 V ·DC Current Gain— : hFE = 750(Min) @ IC= -2 A = 100(Min) @ IC= -4A ·Complement to Type MJE801 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general-purpose amplifier and low-spe. |
| Features | CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA; IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -2A; IB= -40mA VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -4A; IB= -40mA VBE(on)-1 Base-Emitter On Voltage IC= -2A; VCE= -3V VBE(on)-2 Base-Emitter On Voltage IC= -4A; VCE= -3V ICEO Coll. |
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Desde 2024. D4U Semiconductor.
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