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| Part Number | MJE700 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | MJE700 |
| Manufacturer | Fairchild |
| Title | PNP Epitaxial Silicon Darlington Transistor |
| Description | MJE700/701/702/703 MJE700/701/702/703 Monolithic Construction With Built-in BaseEmitter Resistors • High DC Current Gain : hFE= 750 (Min.) @ IC= -1.5 and -2.0A DC • Complement to MJE800/801/802/803 1 TO-126 2.Collector 3.Base 1. Emitter PNP Epitaxial Silicon Darlington Transistor Absolute Maxim. |
| Features | n IC = - 10mA, IB = 0 Min. -60 -80 -100 -100 -100 -500 -2 750 750 100 -2.5 -2.8 -3 -1.2 -2.5 -3 V V V V V V Max. Units V V µA µA µA µA mA ICEO VCE = - 60V, IB = 0 VCE = - 80V, IB = 0 VCB = Rated BVCEO, IE = 0 VCB = Rated BVCEO, IE = 0 TC = 100°C VBE = - 5V, IC = 0 VCE = - 3V, IC = - 1.5A VCE = - 3V, IC = - 2A VCE = - 3V, IC = - 4A IC = - 1.5A, IB = - 30mA IC = - 2A, IB = - 40mA IC = - 4A, IB = -. |
| Part Number | MJE700 |
| Manufacturer | Central Semiconductor |
| Title | COMPLEMENTARY POWER DARLINGTON TRANSISTORS |
| Description | The CENTRAL SEMICONDUCTOR MJE700, MJE800 series devices are medium power complementary silicon Darlington transistors designed for audio amplifier applications as complementary output devices. MARKING: FULL PART NUMBER TO-126 CASE MAXIMUM RATINGS: (TC=25°C) Collector-Base Voltage Collector-Emitt. |
| Features | JE700,701,800,801) 60 VCE(SAT) IC=1.5A, IB=30mA (MJE700,702,800,802) VCE(SAT) IC=2.0A, IB=40mA (MJE701,703,801,803) VCE(SAT) IC=4.0A, IB=40mA VBE(ON) VCE=3.0V, IC=1.5A (MJE700,702,800,802) VBE(ON) VCE=3.0V, IC=2.0A (MJE701,703,801,803) VBE(ON) VCE=3.0V, IC=4.0A hFE VCE=3.0V, IC=1.5A (MJE700,702,800,802) 750 hFE VCE=3.0V, IC=2.0A (MJE701,703,801,803) 750 hFE VCE=3.0V, IC=4.0A 100 fT . |
| Part Number | MJE700 |
| Manufacturer | INCHANGE |
| Title | PNP Transistor |
| Description | ·DC Current Gain— : hFE = 2000(TYP) @ IC= -2A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general-purpose amplifier and low-speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collec. |
| Features | SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA; IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -1.5A; IB= -30mA VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -4A; IB= -40mA VBE(on)-1 Base-Emitter On Voltage IC= -1.5A; VCE= -3V VBE(on)-2 Base-Emitter On Voltage IC= -4A; VCE= -3V ICEO Collector Cutoff Current ICBO Collector Cutoff Cu. |
| Part Number | MJE700 |
| Manufacturer | Motorola |
| Title | 4.0 AMPERE DARLINGTON POWER TRANSISTORS |
| Description | MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJE700/D PNP Plastic Darlington Complementary Silicon Power Transistors . . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2000 (Typ) @ IC = 2.0 Adc • Monolithic Constructi. |
| Features | ÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎ. |
similar datasheet
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| 1 | MJE700G |
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| 5 | MJE701 |
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| 6 | MJE701 |
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| 7 | MJE701 |
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| 8 | MJE701T |
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| 9 | MJE701T |
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| 10 | MJE702 |
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