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| Part Number | MJE3055T |
| Distributor | Stock | Price | Buy |
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| Part Number | MJE3055T |
| Manufacturer | ST Microelectronics |
| Title | COMPLEMENTARY SILICON POWER TRANSISTORS |
| Description | The MJE3055T is a silicon Epitaxial-Base NPN transistor in Jedec TO-220 package. It is intended for power switching circuits and general-purpose amplifiers. The complementary PNP type is MJE2955T. 3 2 1 TO-220 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter VCEO Collector-. |
| Features | . |
| Part Number | MJE3055T |
| Manufacturer | Central Semiconductor |
| Title | NPN Transistor |
| Description | 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824 . |
| Features | . |
| Part Number | MJE3055T |
| Manufacturer | ON Semiconductor |
| Title | Complementary Silicon Plastic Power Transistors |
| Description | MJE2955T (PNP), MJE3055T (NPN) Complementary Silicon Plastic Power Transistors These devices are designed for use in general−purpose amplifier and switching applications. Features • High Current Gain − Bandwidth Product • These Devices are Pb−Free and are RoHS Compliant* MAXIMUM RATINGS Rating S. |
| Features |
• High Current Gain − Bandwidth Product • These Devices are Pb−Free and are RoHS Compliant* MAXIMUM RATINGS Rating Symbol Value Unit Collector−Emitter Voltage Collector−Base Voltage Emitter−Base Voltage Collector Current Base Current Total Device Dissipation @ TC = 25°C Derate above 25°C VCEO VCB VEB IC IB PD (Note 1) 60 70 5.0 10 6.0 75 0.6 Vdc Vdc Vdc Adc Adc W W/°C Operating and Storag. |
| Part Number | MJE3055T |
| Manufacturer | NTE |
| Title | Silicon NPN Transistor |
| Description | The MJE2955T (PNP) and MJE3055T (NPN) are silicon complementary power transistors in a TO−220 plastic package intended for use in general purpose amplifier and switching applications. Features: D High Current Gain − Bandwidth Product Absolute Maximum Ratings: (Note 1) Collector−Emitter Voltage, V. |
| Features | D High Current Gain − Bandwidth Product Absolute Maximum Ratings: (Note 1) Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V Collector−Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70V Emitter−Base Voltage, VEB . . . .. |
| Part Number | MJE3055T |
| Manufacturer | Fairchild |
| Title | NPN Silicon Transistor |
| Description | MJE3055T MJE3055T General Purpose and Switching Applications • DC Current Gain Specified to IC =10A • High Current Gain-Bandwidth Product : fT = 2MHz (Min.) 1 TO-220 2.Collector 3.Emitter 1.Base NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO VEBO. |
| Features | = 4A, IB = 0.4A IC = 10A, IB = 3.3A VCE = 4V, IC = 4A VCE = 10V, IC = 500mA 2 20 5 Min. 60 Max. 700 1 5 5 100 1.1 8 1.8 V V V MHz Units V µA mA mA mA Emitter Cut-off Current *DC Current Gain *Collector-Emitter Saturation Voltage *Base-Emitter On Voltage Current Gain Bandwidth Product * Pulse test: PW≤300µs, duty cycle≤2% Pulse ©2001 Fairchild Semiconductor Corporation Rev. A1, February 2001 M. |
| Part Number | MJE3055T |
| Manufacturer | Motorola |
| Title | 10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS |
| Description | MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJE2955T/D Complementary Silicon Plastic Power Transistors MJE2955T * NPN MJE3055T * *Motorola Preferred Device PNP ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎ. |
| Features |
bol VCEO VCB VEB IC IB Value 60 70 Unit Vdc Vdc Vdc Adc Adc Collector –Emitter Voltage Collector –Base Voltage Emitter –Base Voltage Collector Current Base Current 5.0 10 6.0 75 Total Power Dissipation @ TC = 25_C Derate above 25_C MJE3055T, MJE2955T Operating and Storage Junction Temperature Range PD† Watts W/_C 0.6 TJ, Tstg – 55 to + 150 . . . designed for use in general –purpose amplifier and swit. |
| Part Number | MJE3055T |
| Manufacturer | UTC |
| Title | HIGH VOLTAGE TRANSISTOR |
| Description | The UTC MJE3055T is designed for general purpose of amplifier and switching applications. ORDERING INFORMATION Ordering Number Lead Free Halogen Free MJE3055TL-TA3-T MJE3055TG-TA3-T MJE3055TL-TM3-T MJE3055TG-TM3-T MJE3055TL-TN3-R MJE3055TG-TN3-R Note: Pin Assignment: B: Base C: Case E: . |
| Features | e Temperature TSTG -55 ~ +150 °С Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (Ta=25°С, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS Collector-Emitter Breakdown Voltage BVCEO IC=200mA Colle. |
| Part Number | MJE3055T |
| Manufacturer | TGS |
| Title | Complementary Silicon Power Ttransistors |
| Description | It is intented for use in power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS ( Ta = 25 OC) Parameter Symbol Value Unit Collector-Base Voltage VCBO 70 V Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Total Dissipation at Max. Operating Junction T. |
| Features | . |
| Part Number | MJE3055T |
| Manufacturer | INCHANGE |
| Title | NPN Transistor |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = 60V(Min) ·High DC Current Gain- : hFE= 20-100@IC= 4A ·Complement to Type MJE2955T ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general-purpose amplifier and switching applicati. |
| Features | rwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA; IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 4A; IB= 0.4A VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 10A; IB= 3.3A VBE(on) Base-Emitter On Voltage IC= 4A ; VCE= 4V ICEO Collector Cutoff Current ICBO Collector Cutoff Current IEBO Emitter Cutoff Current VCE= 30V; IB. |
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| 1 | MJE3055 |
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| 2 | MJE3055 |
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| 3 | MJE3055 |
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| 4 | MJE3055 |
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| 5 | MJE3055 |
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| 6 | MJE3055 |
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| 7 | MJE3055 |
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| 8 | MJE3055 |
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| 9 | MJE3055A |
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| 10 | MJE3055AT |
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Desde 2024. D4U Semiconductor.
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