MJE3055T |
Part Number | MJE3055T |
Manufacturer | ON Semiconductor (https://www.onsemi.com/) |
Description | MJE2955T (PNP), MJE3055T (NPN) Complementary Silicon Plastic Power Transistors These devices are designed for use in general−purpose amplifier and switching applications. Features • High Current Gain... |
Features |
• High Current Gain − Bandwidth Product • These Devices are Pb−Free and are RoHS Compliant* MAXIMUM RATINGS Rating Symbol Value Unit Collector−Emitter Voltage Collector−Base Voltage Emitter−Base Voltage Collector Current Base Current Total Device Dissipation @ TC = 25°C Derate above 25°C VCEO VCB VEB IC IB PD (Note 1) 60 70 5.0 10 6.0 75 0.6 Vdc Vdc Vdc Adc Adc W W/°C Operating and Storage Junction Temperature Range TJ, Tstg −55 to +150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality sho... |
Document |
MJE3055T Data Sheet
PDF 58.12KB |
Similar Datasheet
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | MJE3055 |
DIGITRON |
NPN SILICON POWER TRANSISTOR | |
2 | MJE3055 |
INCHANGE |
NPN Transistor | |
3 | MJE3055 |
Fairchild |
NPN Silicon Transistor | |
4 | MJE3055 |
ST Microelectronics |
COMPLEMENTARY SILICON POWER TRANSISTORS | |
5 | MJE3055 |
ON |
COMPLEMENTARY SILICON POWER TRANSISTORS | |
6 | MJE3055 |
GME |
Plastic-Encapsulate Transistors |