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MJE3055T |
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| Part Number | MJE3055T |
| Manufacturer | INCHANGE |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = 60V(Min) ·High DC Current Gain- : hFE= 20-100@IC= 4A ·Complement to Type MJE2955T ·Minimum Lot-to-Lot variations for robust device performance and re... |
| Features |
rwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA; IB= 0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 4A; IB= 0.4A
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 10A; IB= 3.3A
VBE(on) Base-Emitter On Voltage
IC= 4A ; VCE= 4V
ICEO
Collector Cutoff Current
ICBO
Collector Cutoff Current
IEBO
Emitter Cutoff Current
VCE= 30V; IB= 0
VCB= 70V; IE= 0 VCB= 70V; IE= 0; TC= 150℃
VEB= 5V; IC= 0
hFE-1
DC Current Gain
IC= 4A ; VCE= 4V
hFE-2
DC Current Gain
IC= 10A ; VCE= 4V
fT
Current Gain-Bandwidth Product
IC= 0.5A; VCE= 10... |
| Document |
 MJE3055T Data Sheet
PDF 206.09KB |
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Desde 2024. D4U Semiconductor.
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