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| Part Number | MJD3055 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | MJD3055 |
| Manufacturer | Fairchild |
| Title | General Purpose Amplifier |
| Description | MJD3055 MJD3055 General Purpose Amplifier Low Speed Switching Applications D-PAK for Surface Mount Applications • • • • • Lead Formed for Surface Mount Applications (No Suffix) Straight Lead (I-PAK, “ -I “ Suffix) Electrically Similar to Popular MJE3055T DC Current Gain Specified to 10A High Curren. |
| Features | Current Collector Cut-off Current Emitter Cut-off Current *DC Current Gain * Collector-Emitter Saturation Voltage * Base-Emitter ON Voltage Current Gain Bandwidth Product Test Condition IC = 30mA, IB = 0 VCE = 30V, IE = 0 VCB = 70V, IE = 0 VEB = 5V, IC = 0 VCE = 4V, IC = 4A VCE = 4V, IC = 10A IC = 4A, IB = 0.4A IC = 10A, IB = 3.3A VCE = 4V, IC = 4A VCE = 10V, IC = 500mA 2 20 5 Min. 60 Max. 50 2 0. |
| Part Number | MJD3055 |
| Manufacturer | ST Microelectronics |
| Title | Complementary Silicon Power Transistors |
| Description | The MJD2955 and MJD3055 form complementary PNP-NPN pairs. They are manufactured using Epitaxial Base technology for cost-effective performance. 3 1 DPAK TO-252 (Suffix "T4") INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter VCBO Collector-Base Voltage (IE = 0) VCEO Collector-. |
| Features | nce Junction-case Rthj-amb Thermal Resistance Junction-ambient Max Max 6.25 100 oC/W oC/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions ICEX ICBO Collector Cut-off VCE = 70 V Current (VBE = -1.5 V) VCE = 70 V Collector Cut-off Current (IE = 0) VCB = 70 V VCB = 70 V Tj = 150 oC Tj = 150 oC ICEO Collector Cut-off Current (IB = . |
| Part Number | MJD3055 |
| Manufacturer | GME |
| Title | Epitaxial Planar NPN Transistor |
| Description | Epitaxial Planar NPN Transistor FEATURES Lead formed for surface mount applications. Pb Lead-free Straight lead. Electrically similar to popular MJE3055T. DC current gain specified to 10A. APPLICATIONS Low speed switching applications. D-PAK for surface mount applications. Produ. |
| Features |
Lead formed for surface mount applications. Pb Lead-free Straight lead. Electrically similar to popular MJE3055T. DC current gain specified to 10A. APPLICATIONS Low speed switching applications. D-PAK for surface mount applications. Production specification MJD3055 TO-251 TO-252 MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter . |
| Part Number | MJD3055 |
| Manufacturer | ON |
| Title | Complementary Power Transistors |
| Description | www.DataSheet4U.com MJD2955 (PNP) MJD3055 (NPN) Complementary Power Transistors DPAK For Surface Mount Applications http://onsemi.com Designed for general purpose amplifier and low speed switching applications. Features • Lead Formed for Surface Mount Applications in Plastic Sleeves • • • • • • •. |
| Features |
• Lead Formed for Surface Mount Applications in Plastic Sleeves • • • • • • • (No Suffix) Straight Lead Version in Plastic Sleeves (“−1” Suffix) Electrically Similar to MJE2955 and MJE3055 DC Current Gain Specified to 10 Amperes High Current Gain−Bandwidth Product − fT = 2.0 MHz (Min) @ IC = 500 mAdc Epoxy Meets UL 94 V−0 @ 0.125 in ESD Ratings: Human Body Model, 3B u 8000 V Machine Model, C u 40. |
| Part Number | MJD3055 |
| Manufacturer | Motorola |
| Title | SILICON POWER TRANSISTORS |
| Description | MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJD2955/D Complementary Power Transistors • • • • • • MJD2955 PNP MJD3055 SILICON POWER TRANSISTORS 10 AMPERES 60 VOLTS 20 WATTS NPN DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching a. |
| Features | ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ M. |
| Part Number | MJD3055 |
| Manufacturer | TAITRON |
| Title | SMD Power Transistor |
| Description | MJD3055 Marking Code MJD3055 VCEO Collector-Emitter Voltage 60 VCBO Collector-Base Voltage 70 VEBO Emitter-Base Voltage 5 IC Collector Current Continuous 10 IB Base Current 6 Power Dissipation at TC=25°C PD Derate above 25°C 20 0.16 *PD TJ, TSTG Power Dissipation at TA=25°C Derat. |
| Features |
• Designed for general purpose amplifier and low speed switching applications • RoHS compliance Mechanical Data Case: Terminals: Weight: D-PACK(TO-252), Plastic Package Solderable per MIL-STD-202G, Method 208 0.3 grams D-PACK (TO-252) Maximum Ratings (T Ambient=25ºC unless noted otherwise) Symbol Description MJD3055 Marking Code MJD3055 VCEO Collector-Emitter Voltage 60 VCBO Collect. |
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