MJD3055 |
Part Number | MJD3055 |
Manufacturer | GME |
Description | Epitaxial Planar NPN Transistor FEATURES Lead formed for surface mount applications. Pb Lead-free Straight lead. Electrically similar to popular MJE3055T. DC current gain specified to 10... |
Features |
Lead formed for surface mount applications. Pb Lead-free Straight lead. Electrically similar to popular MJE3055T. DC current gain specified to 10A. APPLICATIONS Low speed switching applications. D-PAK for surface mount applications. Production specification MJD3055 TO-251 TO-252 MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Value Units VCBO Collector-Base Volage 70 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5V IC Collector Current 10 A IB Base Current 6A PC Collector Power Dissipation... |
Document |
MJD3055 Data Sheet
PDF 208.79KB |
Similar Datasheet
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | MJD3055 |
Inchange Semiconductor |
Silicon NPN Power Transistor | |
2 | MJD3055 |
Fairchild |
General Purpose Amplifier | |
3 | MJD3055 |
ST Microelectronics |
Complementary Silicon Power Transistors | |
4 | MJD3055 |
ON |
Complementary Power Transistors | |
5 | MJD3055 |
Motorola |
SILICON POWER TRANSISTORS | |
6 | MJD3055 |
TAITRON |
SMD Power Transistor |