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MJD3055 |
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| Part Number | MJD3055 |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | The MJD2955 and MJD3055 form complementary PNP-NPN pairs. They are manufactured using Epitaxial Base technology for cost-effective performance. 3 1 DPAK TO-252 (Suffix "T4") INTERNAL SCHEMATIC DIAGRA... |
| Features |
nce Junction-case Rthj-amb Thermal Resistance Junction-ambient
Max Max
6.25 100
oC/W oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol
Parameter
Test Conditions
ICEX ICBO
Collector Cut-off
VCE = 70 V
Current (VBE = -1.5 V) VCE = 70 V
Collector Cut-off Current (IE = 0)
VCB = 70 V VCB = 70 V
Tj = 150 oC Tj = 150 oC
ICEO
Collector Cut-off Current (IB = 0)
IEBO
Emitter Cut-off Current (IC = 0)
VCEO(sus)∗ Collector-Emitter Sustaining Voltage (IB = 0)
VCE(sat)∗ Collector-Emitter Saturation Voltage
VBE(on)∗ Base-Emitter Voltage
hFE∗ DC Current Gai... |
| Document |
 MJD3055 Data Sheet
PDF 186.35KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | MJD3055 |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
| 2 | MJD3055 |
Fairchild |
General Purpose Amplifier |
|
| 3 | MJD3055 |
ON |
Complementary Power Transistors |
|
| 4 | MJD3055 |
Motorola |
SILICON POWER TRANSISTORS |
|
| 5 | MJD3055 |
GME |
Epitaxial Planar NPN Transistor |
|
| 6 | MJD3055 |
TAITRON |
SMD Power Transistor |
|
Desde 2024. D4U Semiconductor.
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