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| Part Number | MJD117 |
| Distributor | Stock | Price | Buy |
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| Part Number | MJD117 |
| Manufacturer | Inchange Semiconductor |
| Title | Silicon PNP Power Transistor |
| Description | ·High DC current gain ·Built-in a damper diode at E-C ·Lead formed for surface mount applications(NO suffix) ·Straight lead(IPAK,“－I”suffix) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose amplifie. |
| Features | erwise specified SYMBOL PARAMETER CONDITIONS VCE(sat)-1* Collector-Emitter Saturation Voltage IC= -2A; IB=- 8mA VCE(sat)-2* Collector-Emitter Saturation Voltage IC= -4A; IB=- 40mA VBE(sat)* Base-Emitter Saturation Voltage IC=- 4A; IB=- 40mA VBE(on)* Base-Emitter On Voltage IC=-2A; VCE=-3V V(BR)CEO Collector-Emitter Breakdown Voltage IC= -30mA; IB= 0 ICBO Collector Cutoff Current VCB=-. |
| Part Number | MJD117 |
| Manufacturer | CDIL |
| Title | COMPLEMENTARY DARLINGTON PLASTIC POWER TRANSISTORS |
| Description | Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Continuous Peak Base Current Total Power Dissipation Tc=25ºC Derate Above 25ºC Total Power Dissipation Ta=25ºC Derate Above 25ºC Operating and Storage Junction Temperature Range SYMBOL VCBO VCEO VEBO IC IB PD PD. |
| Features | . |
| Part Number | MJD117 |
| Manufacturer | KEC |
| Title | EPITAXIAL PLANAR PNP TRANSISTOR |
| Description | SEMICONDUCTOR TECHNICAL DATA MJD117/L EPITAXIAL PLANAR PNP TRANSISTOR MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE. FEATURES High DC Current Gain. : hFE=1000(Min.), VCE=-4V, IC=-1A. Low Collector-Emitter Saturation Voltage. Straight Lead (IPAK, "L" Suffix) Com. |
| Features | High DC Current Gain. : hFE=1000(Min.), VCE=-4V, IC=-1A. Low Collector-Emitter Saturation Voltage. Straight Lead (IPAK, "L" Suffix) Complementary to MJD112/L. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current DC Pulse Base Current DC Collector Power Dissipation Ta=25 Tc=25 Junction Temperature Storage Tempera. |
| Part Number | MJD117 |
| Manufacturer | STMicroelectronics |
| Title | Complementary power Darlington transistor |
| Description | The devices are manufactured in planar technology with “base island” layout and monolithic Darlington configuration. . TAB 3 1 TO-252 (DPAK) Figure 1. Internal schematic diagram R1 typ. = 15 kΩ R2 typ. = 100 Ω Table 1. Device summary Order codes Marking MJD112T4 MJD117T4 MJD112 MJD117 Janua. |
| Features |
■ Good hFE linearity ■ High fT frequency ■ Monolithic Darlington configuration with integrated antiparallel collector-emitter diode Application ■ Linear and switching industrial equipment Description The devices are manufactured in planar technology with “base island” layout and monolithic Darlington configuration. . TAB 3 1 TO-252 (DPAK) Figure 1. Internal schematic diagram R1 typ. = 15 kΩ R2 . |
| Part Number | MJD117 |
| Manufacturer | Fairchild Semiconductor |
| Title | PNP Silicon Darlington Transistor |
| Description | MJD117 MJD117 D-PAK for Surface Mount Applications • High DC Current Gain • Built-in a Damper Diode at E-C • Lead Formed for Surface Mount Applications (No Suffix) • Straight Lead (I-PAK, “ - I “ Suffix) • Electrically Similar to Popular TIP117 1 D-PAK 1 I-PAK 1.Base 2.Collector 3.Emitter PNP Si. |
| Features | . |
| Part Number | MJD117 |
| Manufacturer | GME |
| Title | Epitaxial Planar PNP Transistor |
| Description | Epitaxial Planar PNP Transistor FEATURES High DC Current Gain. Built-in a Damper Diode at E-C. Pb Lead-free Lead Formed for Surface Mount Applications. Straight Lead. MSL 3. Production specification MJD117 TO-251 TO-252 MAXIMUM RATING operating temperature range applies unless ot. |
| Features |
High DC Current Gain. Built-in a Damper Diode at E-C. Pb Lead-free Lead Formed for Surface Mount Applications. Straight Lead. MSL 3. Production specification MJD117 TO-251 TO-252 MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Value Units VCBO Collector-Base Volage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emit. |
| Part Number | MJD117 |
| Manufacturer | BLUE ROCKET ELECTRONICS |
| Title | Silicon PNP transistor |
| Description | TO-252 PNP 。Silicon PNP transistor in a TO-252 Plastic Package. / Features ，E C TIP117 。 High DC current gain, built-in a damper diode at E-C,electrically similar to popular TIP117. / Applications 。 Medium power switching applications. / Equivalent Circuit / Pinning 12 3 4 PI. |
| Features | ，E C TIP117 。 High DC current gain, built-in a damper diode at E-C,electrically similar to popular TIP117. / Applications 。 Medium power switching applications. / Equivalent Circuit / Pinning 12 3 4 PIN1：Base PIN 2, 4：Collector PIN 3：Emitter / hFE Classifications & Marking 。See Marking Instructions. http://www.fsbrec.com 1/6 MJD117 Rev.E May.-2016 / Absolute Maximum Ratin. |
| Part Number | MJD117 |
| Manufacturer | JCET |
| Title | PNP Transistor |
| Description | JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251-3L Plastic-Encapsulate Transistors MJD117 TRANSISTOR (PNP) TO-251-3L FEATURES z High DC Current Gain z Low Collector-Emitter Saturation Voltage z Complementary to MJD112 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO V. |
| Features | z High DC Current Gain z Low Collector-Emitter Saturation Voltage z Complementary to MJD112 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC RθJA Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Thermal Resistance From Junction To Ambient Junction Temperature Storage Temperature Valu. |
| Part Number | MJD117 |
| Manufacturer | DC COMPONENTS |
| Title | PNP DARLINGTON TRANSISTOR |
| Description | Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and amplifiers. Pinning 1 = Base 2 = Collector 3 = Emitter Absolute Maximum Ratings(TA=25oC) Characteristic Symbol Rating Collector-Base Voltage VCBO -100. |
| Features | . |
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| 2 | MJD112 |
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| 3 | MJD112 |
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| 4 | MJD112 |
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| 7 | MJD112 |
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| 10 | MJD112 |
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