MJD117 |
Part Number | MJD117 |
Manufacturer | Inchange Semiconductor |
Description | ·High DC current gain ·Built-in a damper diode at E-C ·Lead formed for surface mount applications(NO suffix) ·Straight lead(IPAK,“-I”suffix) ·100% avalanche tested ·Minimum Lot-to-Lot variations for r... |
Features |
erwise specified
SYMBOL
PARAMETER
CONDITIONS
VCE(sat)-1* Collector-Emitter Saturation Voltage IC= -2A; IB=- 8mA
VCE(sat)-2* Collector-Emitter Saturation Voltage IC= -4A; IB=- 40mA
VBE(sat)* Base-Emitter Saturation Voltage
IC=- 4A; IB=- 40mA
VBE(on)* Base-Emitter On Voltage
IC=-2A; VCE=-3V
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -30mA; IB= 0
ICBO
Collector Cutoff Current
VCB=- 50V; IE= 0
IEBO
Emitter Cutoff Current
VEB= -5V; IC= 0
hFE-1*
DC Current Gain
IC=-0.5A; VCE= -3V
hFE-2*
DC Current Gain
IC= -2A; VCE=-3V
hFE-3*
DC Current Gain
IC=- 4A; VCE=-3V
COB
Outp... |
Document |
MJD117 Data Sheet
PDF 250.42KB |
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