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MJD117 |
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| Part Number | MJD117 |
| Manufacturer | GME |
| Description | Epitaxial Planar PNP Transistor FEATURES High DC Current Gain. Built-in a Damper Diode at E-C. Pb Lead-free Lead Formed for Surface Mount Applications. Straight Lead. MSL 3. Productio... |
| Features |
High DC Current Gain. Built-in a Damper Diode at E-C. Pb Lead-free Lead Formed for Surface Mount Applications. Straight Lead. MSL 3. Production specification MJD117 TO-251 TO-252 MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Value Units VCBO Collector-Base Volage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -5 V IC Collector Current -2 A ICP Collector Power Dissipation -4 A IB Base Current -50 mA PC Collector Power Dissipation 1.5 W Tj ,Tstg Junction and Storage temperature ra... |
| Document |
 MJD117 Data Sheet
PDF 221.35KB |
Similar Datasheet
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Desde 2024. D4U Semiconductor.
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