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K2936 |
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| Part Number | K2936 |
| Manufacturer | Renesas (https://www.renesas.com/) |
| Description | 2SK2936 Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS =0.010 Ω typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline REJ03G1050-0400 (Previous: ADE-208-559B) Rev.4.00 Sep 07, 2005 RENESAS Package code: PRSS0003AE-A (Package name: TO-220C•FM) D G 1. Gate 2. Drain 3. Source 12 3 . |
| Features |
• Low on-resistance RDS =0.010 Ω typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline REJ03G1050-0400 (Previous: ADE-208-559B) Rev.4.00 Sep 07, 2005 RENESAS Package code: PRSS0003AE-A (Package name: TO-220C •FM) D G 1. Gate 2. Drain 3. Source 12 3 S Rev.4.00 Sep 07, 2005 page 1 of 7 2SK2936 Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 . |
| Datasheet |
 K2936 Data Sheet
PDF 115.14KB |
| Distributor | Stock | Price | Buy |
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K2936 |
| Part Number | K2936 |
| Manufacturer | Hitachi Semiconductor |
| Title | 2SK2936 |
| Description | www.DataSheet.co.kr 2SK2936 Silicon N Channel MOS FET High Speed Power Switching ADE-208-559B (Z) 3rd. Edition Jun 1998 Features • Low on-resistance R DS =0.010 Ω typ. • High speed switching • 4V gate drive device can be driven from 5V source Outline TO–220CFM D G 1 2 3 S 1. Gate 2. Drain 3.. |
| Features |
• Low on-resistance R DS =0.010 Ω typ. • High speed switching • 4V gate drive device can be driven from 5V source Outline TO –220CFM D G 1 2 3 S 1. Gate 2. Drain 3. Source Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr 2SK2936 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse d. |
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|---|---|---|---|---|
| 1 | K2930 |
Hitachi Semiconductor |
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|
| 2 | K2937 |
Renesas Technology |
2SK2937 |
|
| 3 | K2938 |
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2SK2938 |
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| 4 | K2900-01 |
Fuji Electric |
N-channel MOS-FET |
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| 5 | K2902-01MR |
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2SK2902-01MR |
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| 6 | K2915 |
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| 7 | K2917 |
Toshiba Semiconductor |
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| 8 | K2919 |
Sanyo |
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| 9 | K2925 |
Hitachi |
Silicon N-Channel MOSFET |
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| 10 | K2926 |
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Desde 2024. D4U Semiconductor.
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