K2936 |
Part Number | K2936 |
Manufacturer | Hitachi Semiconductor |
Description | www.DataSheet.co.kr 2SK2936 Silicon N Channel MOS FET High Speed Power Switching ADE-208-559B (Z) 3rd. Edition Jun 1998 Features • Low on-resistance R DS =0.010 Ω typ. • High speed switching • 4V ga... |
Features |
• Low on-resistance R DS =0.010 Ω typ. • High speed switching • 4V gate drive device can be driven from 5V source Outline TO –220CFM D G 1 2 3 S 1. Gate 2. Drain 3. Source Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr 2SK2936 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse) I DR I AP Note3 Note3 Note2 Note1 Ratings 60 ±20 45 18... |
Document |
K2936 Data Sheet
PDF 110.88KB |