K2900-01 |
Part Number | K2900-01 |
Manufacturer | Fuji Electric |
Description | > Features - High Current - Low On-Resistance - No Secondary Breakdown - Low Driving Power - Avalanche Rated 2SK2900-01 FAP-IIIB Series N-channel MOS-FET 60V 14,5mΩ ±45A 60W > Outline Drawing > Applications - Motor Control - General Purpose Power Amplifier - DC-DC converters > Maximum Ratings and Characteristics - Absolute Maximum Ratings (TC=25°C), unl. |
Features | - High Current - Low On-Resistance - No Secondary Breakdown - Low Driving Power - Avalanche Rated 2SK2900-01 FAP-IIIB Series N-channel MOS-FET 60V 14,5mΩ ±45A 60W > Outline Drawing > Applications - Motor Control - General Purpose Power Amplifier - DC-DC converters > Maximum Ratings and Characteristics - Absolute Maximum Ratings (TC=25°C), unless otherwise specified Item Symbol Rating Drain-Source-Voltage Continous Drain Current Pulsed Drain Current Gate-Source-Voltage Maximum Avalanche Energy Max. Power Dissipation Operating and Storage Temperature Range V DS ID I D(puls) V GS E AV P. |
Datasheet |
K2900-01 Data Sheet
PDF 243.37KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | K2902-01MR |
Fuji Electric |
2SK2902-01MR | |
2 | K2915 |
Toshiba Semiconductor |
2SK2915 | |
3 | K2917 |
Toshiba Semiconductor |
2SK2917 | |
4 | K2919 |
Sanyo |
2SK2919 | |
5 | K2925 |
Hitachi |
Silicon N-Channel MOSFET | |
6 | K2926 |
Hitachi Semiconductor |
2SK2926 | |
7 | K2929 |
Hitachi Semiconductor |
2SK2929 | |
8 | K2930 |
Hitachi Semiconductor |
2SK2930 | |
9 | K2936 |
Hitachi Semiconductor |
2SK2936 | |
10 | K2936 |
Renesas |
Silicon N Channel MOS FET |