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IRFZ24N |
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| Part Number | IRFZ24N |
| Manufacturer | Inchange Semiconductor |
| Description | ·Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYM. |
| Features |
·Drain Current –ID=17A@ TC=25℃ ·Drain Source Voltage- : VDSS= 55V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.07Ω(Max) ·Fast Switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SY. |
| Datasheet |
 IRFZ24N Data Sheet
PDF 156.70KB |
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IRFZ24N |
| Part Number | IRFZ24N |
| Manufacturer | International Rectifier |
| Title | Power MOSFET |
| Description | Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, pr. |
| Features | Current, VGS @ 10V Pulsed Drain Current # Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw. Thermal Resistance Parameter RθJC RθCS RθJA www.irf.com Ju. |
IRFZ24N |
| Part Number | IRFZ24N |
| Manufacturer | NXP |
| Title | N-channel enhancement mode TrenchMOS transistor |
| Description | N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended for use in switched mode power supplies and general . |
| Features | very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended for use in switched mode power supplies and general purpose switching applications. IRFZ24N QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER Drain-source voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-state resistance VGS = 10 V MAX. 55 1. |
IRFZ24N |
| Part Number | IRFZ24N |
| Manufacturer | ART CHIP |
| Title | Power MOSFET |
| Description | Fifth Generation HEXFET ® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device that HEXFET power MOSFETs are well known for, provides. |
| Features | V 12 Pulsed Drain Current æ 68 Power Dissipation 45 Linear Derating Factor 0.30 VGS EAS IAR EAR dv/dt Gate-to-Source Voltage ±20 Single Pulse Avalanche Energy ç 71 Avalanche Current æ 10 Repetitive Avalanche Energy æ 4.5 Peak Diode Recovery dv/dt è 5.0 TJ Operating Junction and -55 to +175 ISTG Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from c. |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IRFZ24 |
International Rectifier |
Power MOSFET |
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| 2 | IRFZ24 |
Fairchild Semiconductor |
Power MOSFET |
|
| 3 | IRFZ24 |
Vishay |
Power MOSFET |
|
| 4 | IRFZ24A |
Fairchild Semiconductor |
ADVANCED POWER MOSFET |
|
| 5 | IRFZ24L |
International Rectifier |
HEXFET Power MOSFET |
|
| 6 | IRFZ24L |
Vishay |
Power MOSFET |
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| 7 | IRFZ24NL |
International Rectifier |
Power MOSFET |
|
| 8 | IRFZ24NL |
TRANSYS |
Power MOSFET |
|
| 9 | IRFZ24NLPBF |
International Rectifier |
HEXFET Power MOSFET |
|
| 10 | IRFZ24NLPbF |
INCHANGE |
N-Channel MOSFET |
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Desde 2024. D4U Semiconductor.
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