Busque con el número de pieza junto con el fabricante o la descripción
IRFZ24N |
Click to view a larger image
| Part Number | IRFZ24N |
| Manufacturer | International Rectifier |
| Description | Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with th... |
| Features |
Current, VGS @ 10V Pulsed Drain Current # Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw.
Thermal Resistance
Parameter
RθJC RθCS RθJA
www.irf.com
Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient
PD - 94990
IRFZ24NPbF
D
VDSS = 55V
G
RDS(on) = 0.07Ω
S
ID = 17A
TO-220AB
Max. 17 12 68 45 0.30 ±20 71 10 4.5 5.0
-55 to +... |
| Document |
 IRFZ24N Data Sheet
PDF 251.28KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IRFZ24 |
International Rectifier |
Power MOSFET |
|
| 2 | IRFZ24 |
Fairchild Semiconductor |
Power MOSFET |
|
| 3 | IRFZ24 |
Vishay |
Power MOSFET |
|
| 4 | IRFZ24A |
Fairchild Semiconductor |
ADVANCED POWER MOSFET |
|
| 5 | IRFZ24L |
International Rectifier |
HEXFET Power MOSFET |
|
| 6 | IRFZ24L |
Vishay |
Power MOSFET |
|
| 7 | IRFZ24N |
NXP |
N-channel enhancement mode TrenchMOS transistor |
|
| 8 | IRFZ24N |
ART CHIP |
Power MOSFET |
|
| 9 | IRFZ24N |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 10 | IRFZ24NL |
International Rectifier |
Power MOSFET |
|
Desde 2024. D4U Semiconductor.
|