IRFZ24 Datasheet. existencias, precio

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IRFZ24 Power MOSFET

IRFZ24


IRFZ24
Part Number IRFZ24
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IRFZ24

Fairchild Semiconductor
IRFZ24
Part Number IRFZ24
Manufacturer Fairchild Semiconductor
Title Power MOSFET
Description Advanced Power MOSFET IRFZ24 FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ 175°C Operating Temperature ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 60V ♦ Lower RDS(ON): 0.050µ (Typ.) Absolute.
Features ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ 175°C Operating Temperature ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 60V ♦ Lower RDS(ON): 0.050µ (Typ.) Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Curren.


IRFZ24

Vishay
IRFZ24
Part Number IRFZ24
Manufacturer Vishay
Title Power MOSFET
Description Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to app.
Features
• Dynamic dV/dt rating
• 175 °C operating temperature
• Fast switching
• Ease of paralleling
• Simple drive requirements
• Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectivenes.


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