IRFZ24 |
Part Number | IRFZ24 |
Manufacturer | Fairchild Semiconductor |
Description | Advanced Power MOSFET IRFZ24 FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ 175°C Operating T... |
Features |
♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ 175°C Operating Temperature ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 60V ♦ Lower RDS(ON): 0.050µ (Typ.)
Absolute Maximum Ratings
Symbol VDSS
ID
IDM VGS EAS IAR EAR dv/dt
PD
TJ , TSTG
TL
Characteristic
Drain-to-Source Voltage
Continuous Drain Current (TC=25°C)
Continuous Drain Current (TC=100°C)
Drain Current-Pulsed
(1)
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
(2)
Avalanche Current
(1)
Repetitive Avalanche Energy
(1)
Peak... |
Document |
IRFZ24 Data Sheet
PDF 207.75KB |
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | IRFZ20 |
International Rectifier |
(IRFZ20 / IRFZ22) HEXFET TRANSISTORS | |
2 | IRFZ20 |
STMicroelectronics |
N-Channel MOSFET | |
3 | IRFZ20 |
Art Chip |
0.1 Ohm HEXFET | |
4 | IRFZ20 |
Vishay |
Power MOSFET | |
5 | IRFZ22 |
International Rectifier |
(IRFZ20 / IRFZ22) HEXFET TRANSISTORS | |
6 | IRFZ22 |
STMicroelectronics |
N-Channel MOSFET |