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IRFR1N60A SMPS MOSFET


IRFR1N60A
Part Number IRFR1N60A
Distributor Stock Price Buy
Vishay Siliconix
IRFR1N60A
Part Number IRFR1N60A
Manufacturer Vishay Siliconix
Title Power MOSFET
Description IRFR1N60A, IRFU1N60A, SiHFR1N60A, SiHFU1N60A www.vishay.com Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Max.) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 600 VGS = 10 V 14 2.7 8.1 Single 7.0 D DPAK (TO-252) D IPAK (TO-251) D G S G GD S S N-Channel MOSFET FEATU.
Features
• Low Gate Charge Qg Results in Simple Drive Requirement
• Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
• Fully Characterized Capacitance and Avalanche Voltage and Current
• Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS
• Switch Mode Power Supply (SMPS)
• Uninterruptible Power Supply
• Power Factor Correction TYPICAL SMPS TOPOLOGIE.
INCHANGE
IRFR1N60A
Part Number IRFR1N60A
Manufacturer INCHANGE
Title N-Channel MOSFET
Description iscN-Channel MOSFET Transistor IRFR1N60A ·FEATURES ·Low drain-source on-resistance: RDS(ON) =7Ω (MAX) ·Enhancement mode: Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Volt.
Features
·Low drain-source on-resistance: RDS(ON) =7Ω (MAX)
·Enhancement mode: Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA)
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device performance and reliable operation
·DESCRITION
·Switching Voltage Regulators
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage ±30 V .

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