Part Number | IRFR1N60A |
Distributor | Stock | Price | Buy |
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Part Number | IRFR1N60A |
Manufacturer | Vishay Siliconix |
Title | Power MOSFET |
Description | IRFR1N60A, IRFU1N60A, SiHFR1N60A, SiHFU1N60A www.vishay.com Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Max.) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 600 VGS = 10 V 14 2.7 8.1 Single 7.0 D DPAK (TO-252) D IPAK (TO-251) D G S G GD S S N-Channel MOSFET FEATU. |
Features |
• Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Switch Mode Power Supply (SMPS) • Uninterruptible Power Supply • Power Factor Correction TYPICAL SMPS TOPOLOGIE. |
Part Number | IRFR1N60A |
Manufacturer | INCHANGE |
Title | N-Channel MOSFET |
Description | iscN-Channel MOSFET Transistor IRFR1N60A ·FEATURES ·Low drain-source on-resistance: RDS(ON) =7Ω (MAX) ·Enhancement mode: Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Volt. |
Features |
·Low drain-source on-resistance: RDS(ON) =7Ω (MAX) ·Enhancement mode: Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage ±30 V . |
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