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IRFR1N60A |
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| Part Number | IRFR1N60A |
| Manufacturer | INCHANGE |
| Description | iscN-Channel MOSFET Transistor IRFR1N60A ·FEATURES ·Low drain-source on-resistance: RDS(ON) =7Ω (MAX) ·Enhancement mode: Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA) ·100% avalanche tested ·Minimum Lot... |
| Features |
·Low drain-source on-resistance: RDS(ON) =7Ω (MAX) ·Enhancement mode: Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage ±30 V ID Drain Current-Continuous 1.4 A IDM Drain Current-Single Pulsed 5.6 A PD Total Dissipation @TC=25℃ 36 W Tj Max. Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55... |
| Document |
 IRFR1N60A Data Sheet
PDF 284.16KB |
Similar Datasheet
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Desde 2024. D4U Semiconductor.
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