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IRF7342 |
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| Part Number | IRF7342 |
| Manufacturer | International Rectifier |
| Description | l l S1 G1 S2 G2 1 8 D1 D1 D2 D2 2 7 VDSS = -55V RDS(on) = 0.105Ω 3 6 4 5 T op V iew Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well. |
| Features | d for vapor phase, infra red, or wave soldering techniques. Power dissipation of greater than 0.8W is possible in a typical PCB mount application. S O -8 Absolute Maximum Ratings Parameter VDS ID @ TC = 25°C ID @ TC = 70°C IDM PD @TC = 25°C PD @TC = 70°C VGS VGSM EAS dv/dt TJ, TSTG Drain- Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Gate-to-Source Voltage Single Pulse tp<10µs Single Pulse Avalanche Energy Peak Diode Recovery dv/dt Junction and . |
| Datasheet |
 IRF7342 Data Sheet
PDF 136.94KB |
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IRF7342 |
| Part Number | IRF7342 |
| Manufacturer | Infineon |
| Title | Power MOSFET |
| Description | Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer . |
| Features | pace. The package is designed for vapor phase, infra red, or wave soldering techniques. Power dissipation of greater than 0.8W is possible in a typical PCB mount application. SO-8 IRF7342PbF G Gate D Drain S Source Base part number IRF7342PbF Package Type SO-8 Standard Pack Form Quantity Tape and Reel 4000 Orderable Part Number IRF7342PbF Absolute Maximum Ratings Symbol Parameter V. |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IRF734 |
Vishay |
Power MOSFET |
|
| 2 | IRF7341 |
International Rectifier |
HEXFET Power MOSFET |
|
| 3 | IRF7341GPBF |
International Rectifier |
Power MOSFET |
|
| 4 | IRF7341PBF |
International Rectifier |
HEXFET Power MOSFET |
|
| 5 | IRF7341Q |
International Rectifier |
HEXFET Power MOSFET |
|
| 6 | IRF7341QPbF |
International Rectifier |
Power MOSFET |
|
| 7 | IRF7342D2 |
International Rectifier |
MOSFET & Schottky Diode |
|
| 8 | IRF7342D2PBF |
International Rectifier |
MOSFET & Schottky Diode |
|
| 9 | IRF7342PBF |
International Rectifier |
Power MOSFET |
|
| 10 | IRF7342PbF |
Infineon |
Power MOSFET |
|
Desde 2024. D4U Semiconductor.
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