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IRF7341QPbF |
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| Part Number | IRF7341QPbF |
| Manufacturer | International Rectifier |
| Description | These HEXFET ® Power MOSFET’s in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these HEXFET Power MOSFET’s are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extr. |
| Features | of these HEXFET Power MOSFET’s are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in a wide variety of applications. The 175°C rating for the SO-8 package provides improved thermal performance with increased safe operating area and dual MOSFET die capability make it ideal in a variety of power applications. This dual, surface mount SO-8 can dramatically reduce board space and is also available in Tape & Reel. PD - 96108A IRF7341QPbF HEXFET® Po. |
| Datasheet |
 IRF7341QPbF Data Sheet
PDF 209.69KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IRF7341Q |
International Rectifier |
HEXFET Power MOSFET |
|
| 2 | IRF7341 |
International Rectifier |
HEXFET Power MOSFET |
|
| 3 | IRF7341GPBF |
International Rectifier |
Power MOSFET |
|
| 4 | IRF7341PBF |
International Rectifier |
HEXFET Power MOSFET |
|
| 5 | IRF734 |
Vishay |
Power MOSFET |
|
| 6 | IRF7342 |
Infineon |
Power MOSFET |
|
| 7 | IRF7342 |
International Rectifier |
Power MOSFET |
|
| 8 | IRF7342D2 |
International Rectifier |
MOSFET & Schottky Diode |
|
| 9 | IRF7342D2PBF |
International Rectifier |
MOSFET & Schottky Diode |
|
| 10 | IRF7342PBF |
International Rectifier |
Power MOSFET |
|
Desde 2024. D4U Semiconductor.
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