IRF7342 |
Part Number | IRF7342 |
Manufacturer | Infineon (https://www.infineon.com/) |
Description | Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching spe... |
Features |
pace. The package is designed for vapor phase, infra red, or wave soldering techniques. Power dissipation of greater than 0.8W is possible in a typical PCB mount application.
SO-8 IRF7342PbF
G Gate
D Drain
S Source
Base part number IRF7342PbF
Package Type SO-8
Standard Pack
Form
Quantity
Tape and Reel
4000
Orderable Part Number IRF7342PbF
Absolute Maximum Ratings
Symbol
Parameter
VDS
Drain-Source Voltage
ID @ TA = 25°C
Continuous Drain Current, VGS @ -10V
ID @ TA = 70°C IDM
Continuous Drain Current, VGS @ -10V Pulsed Drain Current
PD @TA = 25°C
Maximum Power Dissipatio... |
Document |
IRF7342 Data Sheet
PDF 314.61KB |
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | IRF734 |
Vishay |
Power MOSFET | |
2 | IRF7341 |
International Rectifier |
HEXFET Power MOSFET | |
3 | IRF7341GPBF |
International Rectifier |
Power MOSFET | |
4 | IRF7341PBF |
International Rectifier |
HEXFET Power MOSFET | |
5 | IRF7341Q |
International Rectifier |
HEXFET Power MOSFET | |
6 | IRF7341QPbF |
International Rectifier |
Power MOSFET |