Busque con el número de pieza junto con el fabricante o la descripción
| Distributor | Stock | Price | Buy |
|---|
IRF650A |
| Part Number | IRF650A |
| Manufacturer | Samsung |
| Title | Advanced Power MOSFET |
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IRF650A |
| Part Number | IRF650A |
| Manufacturer | Fairchild |
| Title | Advanced Power MOSFET |
| Description | Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µ A (Max.) @ VDS = 200V Low RDS(ON) : 0.071 Ω (Typ.) 1 2 3 IRF650A BVDSS = 200 V RDS(on) = 0.085 Ω ID = 28 A T. |
| Features | Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µ A (Max.) @ VDS = 200V Low RDS(ON) : 0.071 Ω (Typ.) 1 2 3 IRF650A BVDSS = 200 V RDS(on) = 0.085 Ω ID = 28 A TO-220 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic . |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IRF650 |
Fairchild Semiconductor |
200V N-Channel MOSFET |
|
| 2 | IRF650B |
Fairchild Semiconductor |
200V N-Channel MOSFET |
|
| 3 | IRF654 |
Fairchild Semiconductor |
250V N-Channel MOSFET |
|
| 4 | IRF654A |
Inchange Semiconductor |
N-Channel Mosfet Transistor |
|
| 5 | IRF654A |
Fairchild Semiconductor |
Advanced Power MOSFET |
|
| 6 | IRF654B |
Fairchild Semiconductor |
250V N-Channel MOSFET |
|
| 7 | IRF60B217 |
INCHANGE |
N-Channel MOSFET |
|
| 8 | IRF60B217 |
Infineon |
IR MOSFET |
|
| 9 | IRF60DM206 |
International Rectifier |
N-Channel Power MOSFET |
|
| 10 | IRF60R217 |
INCHANGE |
N-Channel MOSFET |
|
Desde 2024. D4U Semiconductor.
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