Busque con el número de pieza junto con el fabricante o la descripción
| Distributor | Stock | Price | Buy |
|---|
IRF60B217 |
| Part Number | IRF60B217 |
| Manufacturer | Infineon |
| Title | IR MOSFET |
| Description | Application Brushed Motor drive applications BLDC Motor drive applications Battery powered circuits Half-bridge and full-bridge topologies Synchronous rectifier applications Resonant mode power supplies OR-ing and redundant power switches DC/DC and AC/DC converters DC/AC In. |
| Features |
esistance vs. Gate Voltage
1
60
50
40
30
20
10
0 25
50 75 100 125 150 TC , CaseTemperature (°C)
175
Fig 2. Maximum Drain Current vs. Case Temperature
2016 – 01-05 IRF60B217 Absolute Maximum Rating Symbol ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C Parameter Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Silicon Limited) Pulsed Drain. |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IRF60DM206 |
International Rectifier |
N-Channel Power MOSFET |
|
| 2 | IRF60R217 |
INCHANGE |
N-Channel MOSFET |
|
| 3 | IRF60R217 |
Infineon |
IR MOSFET |
|
| 4 | IRF610 |
Inchange Semiconductor |
N-Channel Mosfet Transistor |
|
| 5 | IRF610 |
Intersil Corporation |
N-Channel Power MOSFET |
|
| 6 | IRF610 |
Fairchild Semiconductor |
N-Channel Power MOSFET |
|
| 7 | IRF610 |
Vishay |
Power MOSFET |
|
| 8 | IRF6100 |
International Rectifier |
HEXFET Power MOSFET |
|
| 9 | IRF6100PBF |
International Rectifier |
HEXFET Power MOSFET |
|
| 10 | IRF610A |
Inchange Semiconductor |
N-Channel Mosfet Transistor |
|
Desde 2024. D4U Semiconductor.
|