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IRF650A |
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| Part Number | IRF650A |
| Manufacturer | Fairchild |
| Description | Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µ A (Max.) ... |
| Features |
Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µ A (Max.) @ VDS = 200V Low RDS(ON) : 0.071 Ω (Typ.)
1 2 3
IRF650A
BVDSS = 200 V RDS(on) = 0.085 Ω ID = 28 A
TO-220
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C) Continuous Drain Current (TC=100 oC) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive ... |
| Document |
 IRF650A Data Sheet
PDF 308.93KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IRF650 |
Fairchild Semiconductor |
200V N-Channel MOSFET |
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| 2 | IRF650A |
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| 3 | IRF650A |
Samsung |
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| 4 | IRF650B |
Fairchild Semiconductor |
200V N-Channel MOSFET |
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| 5 | IRF654 |
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| 6 | IRF654A |
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Desde 2024. D4U Semiconductor.
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