Part Number | IRF3710ZL |
Distributor | Stock | Price | Buy |
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Part Number | IRF3710ZL |
Manufacturer | International Rectifier |
Title | HEXFET Power MOSFET |
Description | This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make t. |
Features | l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fas. |
similar datasheet
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | IRF3710Z |
International Rectifier |
HEXFET Power MOSFET | |
2 | IRF3710Z |
INCHANGE |
N-Channel MOSFET | |
3 | IRF3710ZGPbF |
International Rectifier |
Power MOSFET | |
4 | IRF3710ZLPbF |
International Rectifier |
HEXFET Power MOSFET | |
5 | IRF3710ZPbF |
International Rectifier |
HEXFET Power MOSFET | |
6 | IRF3710ZS |
International Rectifier |
HEXFET Power MOSFET | |
7 | IRF3710ZS |
INCHANGE |
N-Channel MOSFET | |
8 | IRF3710ZSPbF |
International Rectifier |
HEXFET Power MOSFET | |
9 | IRF3710 |
nELL |
N-Channel Power MOSFET | |
10 | IRF3710 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |