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IPB80N06S2L-H5 |
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| Part Number | IPB80N06S2L-H5 |
| Manufacturer | Infineon (https://www.infineon.com/) Technologies |
| Description | and charts stated herein. Information For further information on technology, delivery terms and conditions and prices, please contact your nearest Infineon Technologies Office (www.infineon.com) Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact your nearest Infineon . |
| Features |
• N-channel Logic Level - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (lead free) • Ultra low Rds(on) • 100% Avalanche tested IPB80N06S2L-H5 IPP80N06S2L-H5 Product Summary V DS R DS(on),max (SMD version) ID 55 V 4.7 mΩ 80 A PG-TO263-3-2 PG-TO220-3-1 Type IPB80N06S2L-H5 IPP80N06S2L-H5 Package Ordering Code Marking PG-TO263-3-2 SP0002-19068 2N06LH5 PG-TO220-3-1 SP0002-19067 2N06LH5 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current1) Pulsed . |
| Datasheet |
 IPB80N06S2L-H5 Data Sheet
PDF 152.67KB |
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IPB80N06S2L-H5 |
| Part Number | IPB80N06S2L-H5 |
| Manufacturer | VBsemi |
| Title | N-Channel MOSFET |
| Description | IPB80N06S2L-H5-VB IPB80N06S2L-H5-VB Datasheet N-Channel 60 V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS RDS(on) VGS = 10 V ID Configuration 60 V 4 m 150 A Single FEATURES • TrenchFET® power MOSFET • Package with low thermal resistance • 100 % Rg and UIS tested TO-263 D Top View S . |
| Features |
• TrenchFET® power MOSFET • Package with low thermal resistance • 100 % Rg and UIS tested TO-263 D Top View S D G G N-Channel MOSFET S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TC = 25 °C a TC = 125 °C ID Continuous Source Current (Diode Conduction) a IS Pulsed Drain Cu. |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IPB80N06S2L-05 |
Infineon Technologies |
Power-Transistor |
|
| 2 | IPB80N06S2L-06 |
Infineon Technologies |
Power-Transistor |
|
| 3 | IPB80N06S2L-07 |
Infineon Technologies |
Power-Transistor |
|
| 4 | IPB80N06S2L-09 |
Infineon Technologies |
Power-Transistor |
|
| 5 | IPB80N06S2L-11 |
Infineon Technologies |
Power-Transistor |
|
| 6 | IPB80N06S2-05 |
Infineon Technologies |
Power-Transistor |
|
| 7 | IPB80N06S2-07 |
Infineon Technologies |
Power-Transistor |
|
| 8 | IPB80N06S2-08 |
Infineon Technologies |
Power-Transistor |
|
| 9 | IPB80N06S2-09 |
Infineon Technologies |
Power-Transistor |
|
| 10 | IPB80N06S2-H5 |
Infineon Technologies |
Power-Transistor |
|
Desde 2024. D4U Semiconductor.
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