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IPB80N06S2L-09 |
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| Part Number | IPB80N06S2L-09 |
| Manufacturer | Infineon (https://www.infineon.com/) Technologies |
| Description | and charts stated herein. Information For further information on technology, delivery terms and conditions and prices, please contact your nearest Infineon Technologies Office (www.infineon.com) Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact your nearest Infineon . |
| Features |
• N-channel Logic Level - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (lead free) • Ultra low Rds(on) • 100% Avalanche tested IPB80N06S2L-09 IPP80N06S2L-09 Product Summary V DS R DS(on),max (SMD version) ID 55 V 8.3 mΩ 80 A PG-TO263-3-2 PG-TO220-3-1 Type IPB80N06S2L-09 IPP80N06S2L-09 Package Ordering Code Marking PG-TO263-3-2 SP0002-18743 2N06L09 PG-TO220-3-1 SP0002-18742 2N06L09 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current1) Pulsed . |
| Datasheet |
 IPB80N06S2L-09 Data Sheet
PDF 152.40KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IPB80N06S2L-05 |
Infineon Technologies |
Power-Transistor |
|
| 2 | IPB80N06S2L-06 |
Infineon Technologies |
Power-Transistor |
|
| 3 | IPB80N06S2L-07 |
Infineon Technologies |
Power-Transistor |
|
| 4 | IPB80N06S2L-11 |
Infineon Technologies |
Power-Transistor |
|
| 5 | IPB80N06S2L-H5 |
VBsemi |
N-Channel MOSFET |
|
| 6 | IPB80N06S2L-H5 |
Infineon Technologies |
Power-Transistor |
|
| 7 | IPB80N06S2-05 |
Infineon Technologies |
Power-Transistor |
|
| 8 | IPB80N06S2-07 |
Infineon Technologies |
Power-Transistor |
|
| 9 | IPB80N06S2-08 |
Infineon Technologies |
Power-Transistor |
|
| 10 | IPB80N06S2-09 |
Infineon Technologies |
Power-Transistor |
|
Desde 2024. D4U Semiconductor.
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