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IPB80N06S2L-H5 |
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| Part Number | IPB80N06S2L-H5 |
| Manufacturer | VBsemi |
| Description | IPB80N06S2L-H5-VB IPB80N06S2L-H5-VB Datasheet N-Channel 60 V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS RDS(on) VGS = 10 V ID Configuration 60 V 4 m 150 A Single FEATURES • TrenchFET® ... |
| Features |
• TrenchFET® power MOSFET • Package with low thermal resistance • 100 % Rg and UIS tested TO-263 D Top View S D G G N-Channel MOSFET S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TC = 25 °C a TC = 125 °C ID Continuous Source Current (Diode Conduction) a IS Pulsed Drain Current b IDM Single Pulse Avalanche Current Single Pulse Avalanche Energy L = 0.1 mH IAS EAS Maximum Power Dissipation b TC = 25 °C TC = 125 °C PD Operating Junction and Storage Temperature Ran... |
| Document |
 IPB80N06S2L-H5 Data Sheet
PDF 387.60KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IPB80N06S2L-H5 |
Infineon Technologies |
Power-Transistor |
|
| 2 | IPB80N06S2L-05 |
Infineon Technologies |
Power-Transistor |
|
| 3 | IPB80N06S2L-06 |
Infineon Technologies |
Power-Transistor |
|
| 4 | IPB80N06S2L-07 |
Infineon Technologies |
Power-Transistor |
|
| 5 | IPB80N06S2L-09 |
Infineon Technologies |
Power-Transistor |
|
| 6 | IPB80N06S2L-11 |
Infineon Technologies |
Power-Transistor |
|
| 7 | IPB80N06S2-05 |
Infineon Technologies |
Power-Transistor |
|
| 8 | IPB80N06S2-07 |
Infineon Technologies |
Power-Transistor |
|
| 9 | IPB80N06S2-08 |
Infineon Technologies |
Power-Transistor |
|
| 10 | IPB80N06S2-09 |
Infineon Technologies |
Power-Transistor |
|
Desde 2024. D4U Semiconductor.
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