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| Part Number | HGTG20N60C3D |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | HGTG20N60C3D |
| Manufacturer | Intersil Corporation |
| Title | N-Channel IGBT |
| Description | HGTG20N60C3D Data Sheet January 2000 File Number 4494.2 45A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG20N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a. |
| Features | of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is development type TA49178. The diode used in anti-parallel with the IGBT is the RHRP3060 (TA49063). The IGBT is ideal for many high voltage switching. |
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|---|---|---|---|---|
| 1 | HGTG20N60C3 |
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N-Channel IGBT |
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| 2 | HGTG20N60C3 |
Intersil Corporation |
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| 3 | HGTG20N60C3R |
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N-Channel IGBTs |
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| 4 | HGTG20N60C3R |
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| 5 | HGTG20N60A4 |
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| 6 | HGTG20N60A4 |
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N-Channel IGBT |
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| 7 | HGTG20N60A4 |
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| 8 | HGTG20N60A4D |
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| 9 | HGTG20N60A4D |
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| 10 | HGTG20N60B3 |
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Desde 2024. D4U Semiconductor.
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