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| Part Number | HGTG20N60A4D |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | HGTG20N60A4D |
| Manufacturer | Fairchild Semiconductor |
| Title | N-Channel IGBT |
| Description | Data Sheet HGTG20N60A4D February 2009 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG20N60A4D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low o. |
| Features | of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49339. The diode used in anti-parallel is the development type TA49372. This IGBT is ideal for many high voltage switching ap. |
similar datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | HGTG20N60A4 |
Fairchild Semiconductor |
N-Channel IGBT |
|
| 2 | HGTG20N60A4 |
Intersil Corporation |
N-Channel IGBT |
|
| 3 | HGTG20N60A4 |
ON Semiconductor |
IGBT |
|
| 4 | HGTG20N60B3 |
Fairchild Semiconductor |
N-Channel IGBT |
|
| 5 | HGTG20N60B3 |
Intersil Corporation |
N-Channel IGBT |
|
| 6 | HGTG20N60B3 |
ON Semiconductor |
N-Channel IGBT |
|
| 7 | HGTG20N60B3D |
Fairchild Semiconductor |
N-Channel IGBT |
|
| 8 | HGTG20N60B3D |
Intersil Corporation |
N-Channel IGBT |
|
| 9 | HGTG20N60B3D |
ON Semiconductor |
N-Channel IGBT |
|
| 10 | HGTG20N60C3 |
Fairchild Semiconductor |
N-Channel IGBT |
|
Desde 2024. D4U Semiconductor.
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