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HGTG20N60B3 N-Channel IGBT


HGTG20N60B3
Part Number HGTG20N60B3
Distributor Stock Price Buy
Intersil Corporation
HGTG20N60B3
Part Number HGTG20N60B3
Manufacturer Intersil Corporation
Title N-Channel IGBT
Description HGT1S20N60B3S, HGTP20N60B3, HGTG20N60B3 Data Sheet January 2000 File Number 3723.6 40A, 600V, UFS Series N-Channel IGBTs The HGT1S20N60B3S, the HGTP20N60B3 and the HGTG20N60B3 are Generation III MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors..
Features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC mot.
ON Semiconductor
HGTG20N60B3
Part Number HGTG20N60B3
Manufacturer ON Semiconductor
Title N-Channel IGBT
Description UFS Series N-Channel IGBTs 40 A, 600 V HGTG20N60B3 The HGTG20N60B3 is a Generation III MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on−state conduction loss of a bipolar tr.
Features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on−state conduction loss of a bipolar transistor. The much lower on−state voltage drop varies only moderately between 25°C and 150°C. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC mot.

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