HGTG20N60B3 ON Semiconductor N-Channel IGBT Datasheet. existencias, precio

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HGTG20N60B3

ON Semiconductor
HGTG20N60B3
HGTG20N60B3 HGTG20N60B3
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Part Number HGTG20N60B3
Manufacturer ON Semiconductor (https://www.onsemi.com/)
Description UFS Series N-Channel IGBTs 40 A, 600 V HGTG20N60B3 The HGTG20N60B3 is a Generation III MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These de...
Features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on−state conduction loss of a bipolar transistor. The much lower on−state voltage drop varies only moderately between 25°C and 150°C. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. Formerly developmental type TA49050. Features
• 40 A, 600 V at TC = 25°C
• 600 V Switching SOA Capability
• Typical Fall T...

Document Datasheet HGTG20N60B3 Data Sheet
PDF 420.81KB

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