HGTG20N60B3 |
Part Number | HGTG20N60B3 |
Manufacturer | ON Semiconductor (https://www.onsemi.com/) |
Description | UFS Series N-Channel IGBTs 40 A, 600 V HGTG20N60B3 The HGTG20N60B3 is a Generation III MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These de... |
Features |
of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on−state conduction loss of a bipolar transistor. The much lower on−state voltage drop varies only moderately between 25°C and 150°C.
The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.
Formerly developmental type TA49050.
Features
• 40 A, 600 V at TC = 25°C • 600 V Switching SOA Capability • Typical Fall T... |
Document |
HGTG20N60B3 Data Sheet
PDF 420.81KB |
Similar Datasheet
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