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| Part Number | G3401 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | G3401 |
| Manufacturer | GTM |
| Title | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| Description | The G3401 uses advanced trench technology to provide excellent on-resistance extremely efficient and cost-effectiveness device. The G3401 is universally used for all commercial-industrial applications. *Lower Gate Charge *Small Package Outline *RoHS Compliant Features Package Dimensions REF. A B. |
| Features | Package Dimensions REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.40 2.80 1.40 1.60 0.35 0.50 0 0.10 0.45 0.55 REF. G H K J L M Millimeter Min. Max. 1.90 REF. 1.00 1.30 0.10 0.20 0.40 0.85 1.15 0° 10° Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage 3 Continuous Drain Current 3 Continuous Drain Current Pulsed Drain Current1 Power Dissipation Linear Derating Fact. |
similar datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | G3400 |
GTM |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
|
| 2 | G3402 |
Global Mixed-mode Technology |
4-Bit Bidirectional Voltage Level Translator |
|
| 3 | G3403 |
Global Mixed-mode Technology |
Bidirectional I2C Bus and SMBus Voltage Level Translator |
|
| 4 | G3403 |
GTM |
P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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| 5 | G3403A |
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P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
|
| 6 | G3407 |
GTM |
P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
|
| 7 | G30 |
MACOM |
Voltage-Controlled Attenuator Module |
|
| 8 | G3000TF250 |
IXYS |
Anode Shorted Gate Turn-Off Thyristor |
|
| 9 | G3000TF450 |
IXYS |
Anode Shorted Gate Turn-Off Thyristor |
|
| 10 | G3018 |
GTM |
N-CHANNEL MOSFET |
|
Desde 2024. D4U Semiconductor.
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