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G3401 |
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| Part Number | G3401 |
| Manufacturer | GTM |
| Description | The G3401 uses advanced trench technology to provide excellent on-resistance extremely efficient and cost-effectiveness device. The G3401 is universally used for all commercial-industrial application... |
| Features |
Package Dimensions
REF. A B C D E F
Millimeter Min. Max. 2.70 3.10 2.40 2.80 1.40 1.60 0.35 0.50 0 0.10 0.45 0.55
REF. G H K J L M
Millimeter Min. Max. 1.90 REF. 1.00 1.30 0.10 0.20 0.40 0.85 1.15 0° 10°
Absolute Maximum Ratings
Parameter Drain-Source Voltage Gate-Source Voltage 3 Continuous Drain Current 3 Continuous Drain Current Pulsed Drain Current1 Power Dissipation Linear Derating Factor
Operating Junction and Storage Temperature Range
Symbol VDS VGS ID @TA=25 ID @TA=70 IDM PD @TA=25 Tj, Tstg Symbol Rthj-a
Ratings -30 ±12 -4.2 -3.5 -30 1.38 0.01 -55 ~ +150 Ratings 90
Unit V V A ... |
| Document |
 G3401 Data Sheet
PDF 333.91KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | G3400 |
GTM |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
|
| 2 | G3401 |
Global Mixed-mode Technology |
Dual Bidirectional I2C Bus and SMBus VoltageLevel Translator |
|
| 3 | G3402 |
Global Mixed-mode Technology |
4-Bit Bidirectional Voltage Level Translator |
|
| 4 | G3403 |
Global Mixed-mode Technology |
Bidirectional I2C Bus and SMBus Voltage Level Translator |
|
| 5 | G3403 |
GTM |
P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
|
| 6 | G3403A |
GTM |
P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
|
Desde 2024. D4U Semiconductor.
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