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FS50SM-2 |
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| Part Number | FS50SM-2 |
| Manufacturer | Mitsubishi Electric Semiconductor |
| Description | MITSUBISHI Nch POWER MOSFET FS50KM-06 HIGH-SPEED SWITCHING USE FS50KM-06 OUTLINE DRAWING 10 ± 0.3 6.5 ± 0.3 3 ± 0.3 Dimensions in mm 2.8 ± 0.2 15 ± 0.3 f 3.2 ± 0.2 14 ± 0.5 3.6 ± 0.3 1.1 ± 0.2 1.1 ± 0.2 0.75 ± 0.15 E 0.75 ± 0.15 2.54 ± 0.25 2.54 ± 0.25 4.5 ± 0.2 1 2 3 2.6 ± 0.2 ¡10V DRIVE ¡VDSS ..... |
| Features |
current Drain current (Pulsed) Avalanche drain current (Pulsed) Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Isolation voltage Weight L = 100µH VGS = 0V VDS = 0V
Conditions
Ratings 60 ±20 50 200 50 50 200 30 –55 ~ +150 Unit V V A A A A A W °C °C V g Feb.1999 AC for 1minute, Terminal to case Typical value –55 ~ +150 2000 2.0 MITSUBISHI Nch POWER MOSFET FS50KM-06 HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS Symbol V (BR) DSS IGSS IDSS VGS (th) rDS (ON) VDS (ON) y fs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-c) . |
| Datasheet |
 FS50SM-2 Data Sheet
PDF 44.82KB |
| Distributor | Stock | Price | Buy |
|---|
FS50SM-2 |
| Part Number | FS50SM-2 |
| Manufacturer | VBsemi |
| Title | N-Channel MOSFET |
| Description | FS50SM-2-VB FS50SM-2-VB Datasheet N-Channel 100-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) 100 0.018 at VGS = 10 V ID (A) 65a TO-3P G D S D (TAB) FEATURES • TrenchFET® Power MOSFET • 175 °C Junction Temperature • Low Thermal Resistance Package • 100 % Rg Tested. |
| Features |
• TrenchFET® Power MOSFET • 175 °C Junction Temperature • Low Thermal Resistance Package • 100 % Rg Tested APPLICATIONS • Isolated DC/DC Converters D G S N-Channel MOSFET RoHS COMPLIANT ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current (TJ = 175 °C) TC = 25 °C TC = 125 °C ID Pulsed Drai. |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | FS50SM-06 |
Mitsubishi Electric Semiconductor |
Nch POWER MOSFET |
|
| 2 | FS50SM-3 |
Mitsubishi Electric Semiconductor |
Nch POWER MOSFET |
|
| 3 | FS50SM-5A |
Renesas Technology |
N-channel MOSFET |
|
| 4 | FS50SMJ-03 |
Mitsubishi Electric Semiconductor |
Nch POWER MOSFET |
|
| 5 | FS50SMJ-06 |
Mitsubishi Electric Semiconductor |
Nch POWER MOSFET |
|
| 6 | FS50SMJ-2 |
Mitsubishi Electric Semiconductor |
Nch POWER MOSFET |
|
| 7 | FS50SMJ-3 |
Mitsubishi Electric Semiconductor |
Nch POWER MOSFET |
|
| 8 | FS50 |
Feeling Technology |
LINEAR HALL-EFFECT SENSORS |
|
| 9 | FS500R17OE4D |
Infineon |
IGBT |
|
| 10 | FS500R17OE4DP |
Infineon |
IGBT |
|
Desde 2024. D4U Semiconductor.
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