FS500R17OE4DP |
Part Number | FS500R17OE4DP |
Manufacturer | Infineon (https://www.infineon.com/) |
Description | FS500R17OE4DP EconoPACK™+ModulmitTrench/FeldstoppIGBT4undEmitterControlled3DiodeundPressFIT/bereits aufgetragenemThermalInterfaceMaterial EconoPACK™+modulewithTrench/FieldstopIGBT4andEmitterControlled3diodeandPressFIT/ pre-appliedThermalInterfaceMaterial TypischeAnwendungen • Hilfsumrichter • Hochleistungsumrichter • Motorant. |
Features |
• Highshort-circuitcapability • Highsurgecurrentcapability • Unbeatablerobustness • Tvjop=150°C • TrenchIGBT4 MechanicalFeatures • Highmechanicalrobustness • IntegratedNTCtemperaturesensor • Isolatedbaseplate • PressFITcontacttechnology • RoHScompliant • Pre-appliedThermalInterfaceMaterial ModuleLabelCode BarcodeCode128 DMX-Code ContentoftheCode ModuleSerialNumber ModuleMaterialNumber ProductionOrderNumber Datecode(ProductionYear) Datecode(ProductionWeek) Digit 1-5 6-11 12-19 20-21 22-23 Datasheet www.infineon.com PleasereadtheImp. |
Datasheet |
FS500R17OE4DP Data Sheet
PDF 746.24KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | FS500R17OE4D |
Infineon |
IGBT | |
2 | FS50 |
Feeling Technology |
LINEAR HALL-EFFECT SENSORS | |
3 | FS50AS-03 |
Mitsubishi Electric Semiconductor |
Nch POWER MOSFET | |
4 | FS50ASJ-03 |
Mitsubishi Electric Semiconductor |
Nch POWER MOSFET | |
5 | FS50ASJ-03F |
Renesas |
N-channel MOSFET | |
6 | FS50KM-06 |
Mitsubishi Electric Semiconductor |
Nch POWER MOSFET | |
7 | FS50KM-2 |
Mitsubishi Electric Semiconductor |
Nch POWER MOSFET | |
8 | FS50KM-3 |
Mitsubishi Electric Semiconductor |
Nch POWER MOSFET | |
9 | FS50KMJ-03 |
Mitsubishi Electric Semiconductor |
Nch POWER MOSFET | |
10 | FS50KMJ-06 |
Mitsubishi Electric Semiconductor |
Nch POWER MOSFET |