FS50SM-2 |
Part Number | FS50SM-2 |
Manufacturer | VBsemi |
Description | FS50SM-2-VB FS50SM-2-VB Datasheet N-Channel 100-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) 100 0.018 at VGS = 10 V ID (A) 65a TO-3P G D S D (TAB) FEATURES • Tren... |
Features |
• TrenchFET® Power MOSFET • 175 °C Junction Temperature • Low Thermal Resistance Package • 100 % Rg Tested APPLICATIONS • Isolated DC/DC Converters D G S N-Channel MOSFET RoHS COMPLIANT ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current (TJ = 175 °C) TC = 25 °C TC = 125 °C ID Pulsed Drain Current IDM Avalanche Current Single Pulse Avalanche Energyb L = 0.1 mH IAS EAS Maximum Power Dissipationb TC = 25 °C TA = 25 °Cd PD Operating Junction and Storage Temperature Range TJ, T... |
Document |
FS50SM-2 Data Sheet
PDF 228.56KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | FS50SM-06 |
Mitsubishi Electric Semiconductor |
Nch POWER MOSFET | |
2 | FS50SM-2 |
Mitsubishi Electric Semiconductor |
Nch POWER MOSFET | |
3 | FS50SM-3 |
Mitsubishi Electric Semiconductor |
Nch POWER MOSFET | |
4 | FS50SM-5A |
Renesas Technology |
N-channel MOSFET | |
5 | FS50SMJ-03 |
Mitsubishi Electric Semiconductor |
Nch POWER MOSFET | |
6 | FS50SMJ-06 |
Mitsubishi Electric Semiconductor |
Nch POWER MOSFET | |
7 | FS50SMJ-2 |
Mitsubishi Electric Semiconductor |
Nch POWER MOSFET | |
8 | FS50SMJ-3 |
Mitsubishi Electric Semiconductor |
Nch POWER MOSFET | |
9 | FS50 |
Feeling Technology |
LINEAR HALL-EFFECT SENSORS | |
10 | FS500R17OE4D |
Infineon |
IGBT |