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F3711S |
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| Part Number | F3711S |
| Manufacturer | International Rectifier |
| Description | www.DataSheet4U.com PD- 94062B SMPS MOSFET Applications High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use High Frequency Buck Converters for Server Processor Power Synchronous FET Optimized for Synchronous Buck Converters Including Capacitive Induced Turn-on Immunity Benefits Ultra-Low Gate Impedance Ver. |
| Features |
Units
V V A W W W/°C °C
Thermal Resistance
Parameter
RθJC RθCS RθJA RθJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient Junction-to-Ambient (PCB mount)
Typ.
– – – 0.50 – – – – – – Max. 1.04 – – – 62 40 Units °C/W Notes through are on page 11 www.irf.com 1 11/15/01 www.DataSheet4U.com IRF3711/3711S/3711L Static @ TJ = 25°C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient V(BR)DSS RDS(on) VGS(th) IDSS IGSS Min. 20 – – – – – – Static Drain-to-Source On-Resistance – – – Gate Threshold Voltage 1.0 – – – D. |
| Datasheet |
 F3711S Data Sheet
PDF 280.80KB |
| Distributor | Stock | Price | Buy |
|---|
F3711S |
| Part Number | F3711S |
| Manufacturer | VBsemi |
| Title | N-Channel MOSFET |
| Description | F3711S-VB F3711S-VB Datasheet N-Channel 30-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) () 30 0.0024 at VGS = 10 V 0.0027 at VGS = 4.5 V ID (A)a, e 98 98 Qg (Typ) 82 nC D2PAK (TO-263) G D S D G S N-Channel MOSFET FEATURES • TrenchFET® Power MOSFET • 100 % Rg and UIS Te. |
| Features |
• TrenchFET® Power MOSFET • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2011/65/EU APPLICATIONS • OR-ing • Server • DC/DC ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage Gate-Source Voltage VDS 30 V VGS ± 20 TC = 25 °C 98a, e Continuous Drain Current (TJ = 175 °C) TC = 70 °C TA = 25 °C ID 98e 28.8b, c A TA . |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | F3710 |
VBsemi |
N-Channel MOSFET |
|
| 2 | F3710S |
International Rectifier |
IRF3710S |
|
| 3 | F3002 |
Polyfet RF Devices |
RF POWER VDMOS TRANSISTOR |
|
| 4 | F3003 |
CSF |
Tube |
|
| 5 | F3007S |
VBsemi |
N-Channel MOSFET |
|
| 6 | F3027 |
CSF |
Tube |
|
| 7 | F30D05 |
Mospec Semiconductor |
Power Rectifier |
|
| 8 | F30D10 |
Mospec Semiconductor |
Power Rectifier |
|
| 9 | F30D15 |
Mospec Semiconductor |
Power Rectifier |
|
| 10 | F30D20 |
Mospec Semiconductor |
Power Rectifier |
|
Desde 2024. D4U Semiconductor.
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