F3007S |
Part Number | F3007S |
Manufacturer | VBsemi |
Description | F3007S-VB F3007S-VB Datasheet N-Channel 80 V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS RDS(on) VGS = 10 V RDS(on) VGS = 4.5 V ID Configuration 80 V 6 mΩ 10 mΩ 120 A Single TO-263 FEATURES • ThunderFET® power MOSFET • Maximum 175 °C junction temperature • 100 % Rg and UIS tested • Material categorization: for definitions of compliance ple. |
Features |
• ThunderFET® power MOSFET • Maximum 175 °C junction temperature • 100 % Rg and UIS tested • Material categorization: for definitions of compliance please see D G Top View S D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current (TJ = 150 °C) TC = 25 °C ID TC = 125 °C Pulsed Drain Current (t = 100 μs) IDM Avalanche Current Single Avalanche Energy a IAS L = 0.1 mH EAS Maximum Power Dissipation a Operating Junction and Storage Temperature Range TC = 25 °C T. |
Datasheet |
F3007S Data Sheet
PDF 420.03KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | F3002 |
Polyfet RF Devices |
RF POWER VDMOS TRANSISTOR | |
2 | F3003 |
CSF |
Tube | |
3 | F3027 |
CSF |
Tube | |
4 | F30D05 |
Mospec Semiconductor |
Power Rectifier | |
5 | F30D10 |
Mospec Semiconductor |
Power Rectifier | |
6 | F30D15 |
Mospec Semiconductor |
Power Rectifier | |
7 | F30D20 |
Mospec Semiconductor |
Power Rectifier | |
8 | F30D30 |
Mospec Semiconductor |
POWER RECTIFIERS | |
9 | F30D40 |
Mospec Semiconductor |
POWER RECTIFIERS | |
10 | F30D50 |
Mospec Semiconductor |
POWER RECTIFIERS |