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F3710 |
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| Part Number | F3710 |
| Manufacturer | VBsemi |
| Description | F3710-VB F3710-VB Datasheet N-Channel 100-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) 100 0.017 at VGS = 10 V ID (A) 70a TO-220AB FEATURES • TrenchFET® Power MOSFET • 175 °C Junction Temperature • Low Thermal Resistance Package • 100 % Rg Tested APPLICATIONS • Isolated DC/DC Converters D RoHS COMPLIANT GD S Top View G . |
| Features |
• TrenchFET® Power MOSFET • 175 °C Junction Temperature • Low Thermal Resistance Package • 100 % Rg Tested APPLICATIONS • Isolated DC/DC Converters D RoHS COMPLIANT GD S Top View G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current (TJ = 175 °C) TC = 25 °C TC = 125 °C ID Pulsed Drain Current IDM Avalanche Current Single Pulse Avalanche Energyb L = 0.1 mH IAS EAS Maximum Power Dissipationb TC = 25 °C TA = 25 °Cd PD Operating Junction and Storage Temperat. |
| Datasheet |
 F3710 Data Sheet
PDF 216.15KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | F3710S |
International Rectifier |
IRF3710S |
|
| 2 | F3711S |
VBsemi |
N-Channel MOSFET |
|
| 3 | F3711S |
International Rectifier |
IRF3711S |
|
| 4 | F3002 |
Polyfet RF Devices |
RF POWER VDMOS TRANSISTOR |
|
| 5 | F3003 |
CSF |
Tube |
|
| 6 | F3007S |
VBsemi |
N-Channel MOSFET |
|
| 7 | F3027 |
CSF |
Tube |
|
| 8 | F30D05 |
Mospec Semiconductor |
Power Rectifier |
|
| 9 | F30D10 |
Mospec Semiconductor |
Power Rectifier |
|
| 10 | F30D15 |
Mospec Semiconductor |
Power Rectifier |
|
Desde 2024. D4U Semiconductor.
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