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EMD11N15F |
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| Part Number | EMD11N15F |
| Manufacturer | Excelliance MOS |
| Description | BVDSS 150V RDSON (MAX.) 11.5mΩ ID 45A Single N Channel MOSFET UIS, Rg 100% Tested Pb-Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate-Source Voltage VGS Continuous Drain Current Pulsed Drain Current1 TC = 25 °C ID TC = 100 °C IDM Avalanche Current IAS Avalanc. |
| Features | / W 2022/12/19 p.1 ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS EMD11N15F LIMITS UNIT MIN TYP MAX STATIC Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current1 Drain-Source On-State Resistance1 Forward Transconductance1 V(BR)DSS VGS(th) IGSS IDSS ID(ON) RDS(ON) gfs VGS = 0V, ID = 250A VDS = VGS, ID = 250A VDS = 0V, VGS = ±20V VDS = 120V, VGS = 0V VDS = 100V, VGS = 0V, TJ = 125 °C VDS = 10V, VGS = 10V VGS = 10V, ID = 20A VDS = 5V, ID = 20A DYNAMIC 150 V . |
| Datasheet |
 EMD11N15F Data Sheet
PDF 360.33KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | EMD11N15E |
Excelliance MOS |
Single N-Channel Logic Level Enhancement Mode Field Effect Transistor |
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| 2 | EMD10 |
JCET |
Dual Digital Transistors |
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| 3 | EMD10N06A |
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N-Channel Logic Level Enhancement Mode Field Effect Transistor |
|
| 4 | EMD10N06E |
Excelliance MOS |
MOSFET |
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| 5 | EMD10N70F |
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MOSFET |
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| 6 | EMD12 |
Rohm |
Power management (dual digital transistors) |
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| 7 | EMD12 |
JCET |
Dual Digital Transistors |
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| 8 | EMD12 |
Jin Yu Semiconductor |
General purpose transistors |
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| 9 | EMD12N06A |
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MOSFET |
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| 10 | EMD12N06H |
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MOSFET |
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Desde 2024. D4U Semiconductor.
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